Gas Distribution Plate Heat for Etch Sublimation
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Solution Overview
Problem
Conventional electrostatic chuck technology limits substrate temperature ramping rates and safe operating temperatures, making it difficult to sublime etching by-products effectively at temperatures greater than 110 degrees Celsius, which restricts the sublimation process and substrate throughput.
Innovation Solution
A method involving de-chucking the substrate from the electrostatic chuck and using a gas distribution plate to cyclically etch and sublime dielectric layer by-products at different temperatures and pressure levels, allowing for higher temperature processing without exceeding the electrostatic chuck's design limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the substrate temperature is increased to sublime etching by-products, then the sublimation effectiveness is improved, but the electrostatic chuck bonding materials are damaged due to excessive heating
Solution Approach 1:
The patent divides the heating function into two separate components: the electrostatic chuck maintains safe operating temperatures (protecting bonding materials), while a dedicated heater element provides additional heat for sublimation. This segmentation allows each component to operate within its optimal temperature range without compromising the other.
Solution Approach 2:
The patent introduces a heater element as an intermediary component between the electrostatic chuck and the substrate. This mediator provides the additional heat required for sublimation without directly compromising the electrostatic chuck's bonding materials, as the heater is positioned to transfer heat to the substrate rather than heating the chuck itself.
2Productivity
If the substrate temperature ramping rate is increased to improve throughput, then the substrate throughput is improved, but the electrostatic chuck bonding materials are damaged due to excessive heating
Solution Approach 1:
The heating function is segmented between the electrostatic chuck (for safe operating temperature) and a dedicated heater element (for rapid temperature ramping). This allows the substrate to be heated quickly for sublimation while the chuck itself remains within safe temperature limits, protecting the bonding materials.
Solution Approach 2:
A heater element serves as an intermediary that enables rapid temperature ramping of the substrate without directly heating the electrostatic chuck. This mediator allows high throughput by achieving fast temperature changes while isolating the chuck's bonding materials from excessive thermal stress.
3Temperature
If the substrate temperature is increased above 110 degrees Celsius to sublime by-products, then the sublimation process is improved, but the electrostatic chuck cannot operate safely beyond its design limits
Solution Approach 1:
The patent segments the temperature control function so that the electrostatic chuck operates within its safe design limits (below 110°C) while a separate heater element enables the substrate to reach higher temperatures (above 110°C) for effective sublimation. This segmentation allows the system to achieve high substrate temperatures without exceeding the chuck's operational adaptability limits.
Solution Approach 2:
The heater element acts as an intermediary that decouples the substrate temperature from the electrostatic chuck temperature. This allows the substrate to be heated above 110°C for improved sublimation while the chuck remains within its safe operating range, effectively expanding the system's temperature adaptability without compromising the chuck's design limits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-temperature etching and sublimation processes, increasing substrate throughput while maintaining the reliability of the electrostatic chuck by avoiding excessive heating that could damage the chuck's bonding materials.
Implementation Method 1
flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts
Implementation Method 2
flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts
Implementation Method 3
the substrate is chucked on an electrostatic chuck
Data Source
AI summary
A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.