Gas Distribution Element Layout for Uniform Wafer Oxidation
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Solution Overview
Problem
In low-pressure semiconductor manufacturing, existing gas intake modes in annealing equipment result in uneven gas distribution, leading to non-uniform process conditions and defects in the oxide layer formed on semiconductor workpieces due to differences in gas flow between the center and edge of the wafer.
Innovation Solution
A gas distribution element with regions of varying hole distribution densities is designed, where the first region has sparse hole distribution near the center and denser distribution towards the edge, ensuring uniform gas flow across the reaction chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform hole distribution is used in gas distribution element, then manufacturing is simple, but gas flow uniformity across wafer surface deteriorates
Solution Approach 1:
The gas distribution element implements different hole distribution densities in different regions: the first region (central area with radius 0.3-0.5R) has a first hole distribution density, while the second region (outer area with radius 0.7-0.9R) has a second hole distribution density that is 1.2-2.0 times the first density. This local differentiation ensures uniform gas flow across the wafer surface by compensating for the natural tendency of gas to concentrate at the center, thereby resolving the contradiction between manufacturing simplicity and gas flow uniformity.
2Device complexity
If gas intake is from top or side in atmospheric pressure equipment, then equipment structure is simple, but gas distribution uniformity deteriorates in low-pressure equipment
Solution Approach 1:
The patent applies local quality by creating non-uniform hole distribution in the gas distribution element, with higher density holes in the second region (outer area) and lower density in the first region (central area). This local differentiation compensates for the non-uniform gas flow characteristics in low-pressure environments, achieving uniform gas distribution across the wafer surface while maintaining the simplicity of the overall equipment structure.
Solution Approach 2:
The patent changes the parameter of hole distribution density from uniform to non-uniform across different regions. Specifically, the second region has a hole distribution density 1.2-2.0 times that of the first region, which adjusts the gas flow parameters to achieve uniform distribution in low-pressure conditions without increasing equipment complexity.
Data Source
AI summary
Provided is a gas distribution element and a heat treatment device containing the gas distribution element. The gas distribution element comprises at least two regions with different hole distribution densities. Specifically, the gas distribution element comprises a first region defined by a first distance radially extending outward from a geometric center, and a second region defined by a second distance radially extending from an outermost edge toward the geometric center; and the first region and the second region respectively have holes with different distribution densities.