Gas Ejector for Uniform Film Thickness in Substrate Processing
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Solution Overview
Problem
In substrate processing, the film thickness on wafers often becomes thicker in the outer peripheral portions than in the central portions due to uneven gas distribution, leading to non-uniform film formation.
Innovation Solution
A substrate processing apparatus with a dilution gas ejector that supplies a dilution gas from the side direction of the wafers along their surfaces, diluting the processing gases and maintaining a consistent gas concentration, thereby preventing excessive film thickness in the outer peripheral regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If raw material gas is supplied from a predetermined position along the side direction of wafers, then film formation is achieved, but film thickness becomes thicker in outer peripheral portions than in central portions
Solution Approach 1:
A dilution gas is introduced as an intermediary substance from a position different from the raw material gas supply position. This dilution gas mixes with the raw material gas in the processing container, acting as a mediator to reduce the concentration of reaction active species in the outer peripheral portions and achieve more uniform film thickness across the wafer surface
Solution Approach 2:
The patent applies local quality by supplying dilution gas from a specific position (different from the raw material gas supply position) to create localized concentration gradients. This results in different gas concentrations at different locations (central vs. outer peripheral regions), allowing precise control over film thickness uniformity across the wafer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the in-plane uniformity of film thickness on wafers by ensuring that the film thickness in the outer peripheral portions does not exceed that in the central portions, enhancing the uniformity of the film formed.
Implementation Method 1
a gas ejector provided on the processing container and communicating with the gas flow path, the gas ejector being configured to distribute a gas introduced from the gas nozzle and to eject the gas from an outer peripheral portion of the processing container
Data Source
AI summary
A technique for improving uniformity in a plane of a substrate is provided. A substrate processing apparatus according an aspect of the present disclosure includes a processing container having a substantially cylindrical shape, a gas nozzle extending in a vertical direction along an inside of an inner wall of the processing container and forming a gas flow path therein, and a gas ejector provided on the processing container and communicating with the gas flow path, the gas ejector being configured to distribute a gas introduced from the gas nozzle and to eject the gas from an outer peripheral portion of the processing container.