Gas Supply Flow Modifier for Uniform Semiconductor Gas Distribution

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Solution Overview

Problem

Existing gas supply systems struggle to evenly distribute processing gas across substrates, especially at increased flow rates, leading to uneven film formation during semiconductor manufacturing.

Innovation Solution

A gas supply system with a flow path and multiple openings intersecting the path, incorporating a flow modifier to perturb the gas flow, ensuring uniform distribution across the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the flow rate of processing gas is increased to meet refinement requirements, then the gas supply capacity is improved, but the uniformity of gas distribution between substrates deteriorates

Engineering Contradiction:
Improveflow rate of processing gasVSAvoiduniformity of gas distribution
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The flow path is divided into multiple independent channels, each serving specific openings. This segmentation allows different flow rates to be controlled for different groups of openings, enabling high overall flow rate while maintaining uniform distribution through balanced channel design

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different portions of the flow path are designed with different characteristics (e.g., different channel lengths, cross-sectional areas, or flow modifiers) to optimize gas distribution locally. This ensures that each region delivers appropriate flow rates to achieve uniform gas distribution across all substrates

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system achieves even gas distribution, improving film thickness uniformity and consistency across substrates, enhancing semiconductor manufacturing quality.

Implementation Method 1

a flow modifier provided to block a portion of the flow path, and configured to perturb flow of the gas flowing in the flow path toward the plurality of openings

Methodology Applied
Scientific EffectFlow perturbation: Turbulence

Data Source

PatentUS20260009129A1Gas supply, processing apparatus, gas supply method, and method of manufacturing semiconductor device
Publication Date: 2026.01.08 KOKUSAI DENKI KK
  • US20260009129A1 patent drawing
  • US20260009129A1 patent drawing
  • US20260009129A1 patent drawing

AI summary

A gas supply includes: a flow path in which a gas flows; a plurality of openings respectively provided in a direction intersecting the flow path to supply the gas into a processing chamber, and a flow modifier provided to block a portion of the flow path, and configured to perturb flow of the gas flowing in the flow path toward the plurality of openings.