Gas-Injected Wafer Chemistry for Faster Single-Step Cleaning
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Solution Overview
Problem
Existing methods for cleaning semiconductor wafers are inefficient and time-consuming, with single-wafer processing taking around four minutes using the SCROD method.
Innovation Solution
A gas-injected chemistry system that dispenses a gas-enriched chemical mixture, such as ozonated HF, in a single step, reducing processing time to fifty seconds by integrating a gas generator, mixing tank, sample chamber, and controller to control gas concentration and mixture properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sequential repetitive cleaning steps (ozonated water then diluted HF) are used, then cleaning effectiveness is achieved, but processing time increases to four minutes
Solution Approach 1:
The patent combines multiple cleaning chemicals (ozonated water and diluted HF) into a single mixed chemical solution that is dispensed onto the wafer in one step, eliminating the need for sequential repetitive cleaning steps while maintaining cleaning effectiveness
Solution Approach 2:
The system pre-mixes the cleaning chemicals in a mixing tank before dispensing, so that the oxidation and etching agents are already combined and ready to act simultaneously on the wafer surface, reducing the total processing time
2Manufacturing precision
If gas concentration in chemical mixture is increased to improve cleaning performance, then cleaning effectiveness improves, but system complexity increases due to need for precise control
Solution Approach 1:
The system incorporates a gas sensor that continuously monitors the concentration of gas in the chemical mixture and provides feedback to a controller, which automatically adjusts gas flow to maintain the desired concentration, simplifying operation while ensuring precise cleaning performance
Solution Approach 2:
The system dynamically adjusts the gas concentration parameter in the chemical mixture based on process requirements and sensor feedback, allowing optimization of cleaning performance without manual intervention or complex manual control mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system significantly reduces processing time from four minutes to fifty seconds while effectively cleaning semiconductor wafers, and can also be used for etching processes.
Implementation Method 1
a gas generator configured to generate a gas
Implementation Method 2
a mixing tank configured to contain a gas-enriched chemical mixture
Implementation Method 3
oxidation (via the ozonated water) and etching (via the diluted HF)
Data Source
AI summary
The present disclosure relates to systems and methods for gas injected chemistry for single wafer processing. An example method includes generating, by a gas generator, a gas. The method also includes mixing, in a mixing tank, a gas-enriched chemical mixture comprising the gas and a chemical mixture. The method also includes dispensing, via a sample chamber, a dispensed volume of the gas-enriched chemical mixture onto the substrate. The method also includes returning a spent volume of the gas-enriched chemical mixture to the mixing tank.