Gas Injector Flow Channel Geometry for Backstreaming Control

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Solution Overview

Problem

Backstreaming of gases in film deposition apparatuses leads to incomplete reactions and contamination of gas flow channels, affecting the quality of deposited films in semiconductor processes.

Innovation Solution

The gas injector design is improved by varying the cross-sectional area of gas flow channels to control gas flow rates and reaction times, preventing backstreaming and enhancing deposition efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the gas flow rate is increased to prevent backstreaming, then the reliability of the gas flow system is improved, but the manufacturing precision of the gas flow channel structure becomes more difficult to control

Engineering Contradiction:

Improvegas flow stabilityVSAvoidgas flow channel structure

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the geometric parameters of the gas flow channel, specifically varying the cross-sectional area along the flow direction. This parameter modification allows the system to achieve higher gas flow rates and prevent backstreaming while maintaining manufacturability through controlled geometric variations.

Inventive Principle:

Principle #35Parameter changes

2Productivity

If the cross-sectional area of gas flow channels is modified to increase flow rates, then the productivity of film deposition is improved, but the device complexity of the gas injector increases

Engineering Contradiction:

Improvefilm deposition efficiencyVSAvoidgas injector structure

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent modifies the cross-sectional area parameter of the gas flow channels to optimize gas flow rates and reaction times. This parameter change enhances film deposition productivity while the complexity increase is managed through systematic geometric modifications rather than adding separate components.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This modification ensures uniform gas distribution and increased flow rates, improving the quality and efficiency of film deposition by minimizing backstreaming and contamination, thereby enhancing the consistency and quality of semiconductor films.

Implementation Method 1

a plurality of gas flow channels respectively connecting the gas inlets with the gas outlets and delivering the several kinds of gases to the gas outlets

Methodology Applied

Scientific EffectGas flow:

Implementation Method 2

the cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets

Methodology Applied

Scientific EffectFlow rate control through geometry:

Implementation Method 3

A film is then deposited on each substrate W through physical or chemical reactions induced by heating

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS10801110B2Gas injector for semiconductor processes and film deposition apparatus

Publication Date: 2020.10.13 HERMES EPITEK

AI summary

A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.