Gas Injector Hole Layout for Uniform Substrate Processing

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Solution Overview

Problem

Existing substrate processing apparatuses face issues with non-uniform gas supply along the longitudinal direction of the gas injector, leading to variations in film thickness across substrates.

Innovation Solution

The apparatus incorporates a gas injector with a pipe configuration that includes first injection holes along the longitudinal direction and smaller, obliquely positioned second injection holes at the tip of the pipe, ensuring uniform gas distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a single type of injection hole is used along the longitudinal direction of the pipe, then the structure is simple, but the gas supply amount becomes non-uniform causing film thickness variation

Engineering Contradiction:

Improvefilm thickness uniformityVSAvoidgas injector structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The gas injector pipe is designed with different types of injection holes at different locations: first injection holes along the longitudinal direction in the middle section, and second injection holes at the tip portion. This local differentiation ensures uniform gas supply distribution throughout the reaction tube, resolving the film thickness uniformity issue without requiring complete structural redesign.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The injection hole system is segmented into two distinct groups: first injection holes for the middle section and second injection holes for the tip portion. This segmentation allows each group to be optimized for its specific location, with the second injection holes having smaller opening areas to compensate for the natural gas flow decay toward the pipe tip, thereby achieving overall uniformity.

Inventive Principle:

Principle #1Segmentation

2Productivity

If the pipe length is increased to cover more substrates, then more substrates can be processed, but the gas supply bias increases causing non-uniform film thickness

Engineering Contradiction:

Improvenumber of substrates processedVSAvoidfilm thickness uniformity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

By introducing second injection holes with smaller opening areas at the tip portion, the system compensates for the increased pipe length effect. The localized adjustment at the tip maintains uniform gas distribution even when processing a larger number of substrates arranged vertically in the reaction tube.

Inventive Principle:

Principle #3Local quality

3Manufacturing precision

If injection holes are opened perpendicular to the longitudinal direction, then gas supply is straightforward, but pressure deviations occur causing non-uniform gas distribution

Engineering Contradiction:

Improvegas distribution uniformityVSAvoidpressure deviation in pipe

Core Design Contradiction:

Manufacturing precisionVSStress or pressure

Solution Approach 1:

The second injection holes are designed with asymmetric orientation (oblique to the longitudinal direction) and smaller opening areas compared to the first injection holes. This asymmetric design at the tip portion effectively manages pressure deviations that occur along the pipe length, ensuring uniform gas distribution to all substrates.

Inventive Principle:

Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration stabilizes gas supply and reduces pressure deviations, resulting in consistent gas distribution and uniform film thickness across substrates.

Implementation Method 1

a gas injector including a pipe extending along a direction in which the plurality of substrates is arranged, and configured to supply a gas into the process container

Methodology Applied

Scientific EffectGas flow distribution:

Data Source

PatentUS12503768B2Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and gas injector

Publication Date: 2025.12.23 KOKUSAI DENKI KK

AI summary

There is provided a technique that includes a process container where a plurality of substrates to be processed is arranged in an inside of the process container; and a gas injector including a pipe extending along a direction in which the plurality of substrates is arranged, and configured to supply a gas into the process container, wherein the gas injector includes at least one first injection hole installed along a longitudinal direction of the pipe in a section where the plurality of substrates is arranged, and configured to supply the gas, and a plurality of second injection holes having an area smaller than a flow path cross-sectional area of the pipe, and installed to be opened obliquely to the longitudinal direction at a tip of the pipe.