Gas Injector Retrofit for Uniform Plasma Etch Flow
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Solution Overview
Problem
As semiconductor technology advances to nanometer nodes, three-dimensional transistor designs like Fin FETs and GAA FETs face challenges in achieving uniform etch rates during manufacturing, particularly due to non-uniform gas flow in plasma processing systems, leading to variations in etch rates across the substrate.
Innovation Solution
Retrofitting the plasma processing system by reducing the size of the guide pin in the holder and rotating the gas injector and weldment to align edge feeding holes with passageways, reducing gas seepage into the central gas feeding passageway, thereby achieving a more uniform etch rate across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied through the central gas feeding passageway and edge feeding passageways in the conventional alignment, then gas flow is provided to the plasma chamber, but gas seeps from the edge feeding hole into the central gas feeding passageway causing non-uniform etch rate across the substrate
Solution Approach 1:
The patent applies asymmetry by deliberately misaligning the edge feeding hole with the central gas feeding passageway. The edge feeding hole is positioned at an angular offset (e.g., 10-30 degrees) relative to the radial line from the central passageway, preventing direct gas seepage while maintaining effective gas distribution to the plasma chamber. This asymmetric configuration eliminates the harmful gas seepage path while preserving the beneficial gas flow distribution.
Solution Approach 2:
The patent introduces an intermediary mechanism by using the angular offset as a geometric mediator between the edge feeding hole and central gas feeding passageway. This angular offset acts as an intermediary element that blocks the direct gas seepage path while allowing the gas distribution function to remain effective, thus mediating between the conflicting requirements of gas flow delivery and gas seepage prevention.
2Ease of manufacture
If the guide pin is used to align the holder and gas injector, then assembly is simplified, but the edge feeding hole cannot be properly aligned with the passageway due to radial offset
Solution Approach 1:
The patent applies dynamics by making the gas injector rotatable relative to the holder after assembly. The gas injector can be rotated to adjust the angular position of the edge feeding hole, enabling precise alignment with the passageway. This dynamic adjustment capability allows the system to transition from a fixed asymmetric configuration to an optimized aligned configuration, resolving the conflict between assembly simplicity and gas flow alignment precision.
Solution Approach 2:
The patent applies preliminary action by first assembling the holder and gas injector using the simple guide pin alignment, then subsequently rotating the gas injector to achieve the optimal angular alignment. This two-stage process performs the preliminary assembly action with simple guide pin alignment, followed by a refinement action that achieves the precise gas flow alignment required for uniform etching.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more uniform etch rate across the semiconductor substrate, reducing the center's etch rate relative to the periphery and enhancing the overall uniformity of the etching process, which is crucial for precise transistor fabrication.
Implementation Method 1
performing an etching operation on the semiconductor substrate
Implementation Method 2
etching operation
Data Source
AI summary
Embodiments are directed to a method of operating a plasma processing system by retrofitting one or more components thereof. The method includes removing a holder from a gas supply mechanism of the plasma processing system. The holder includes a gas injector that is configured to provide gas received from a gas source to a plasma chamber of the plasma processing system. The method further includes reducing a size of a guide pin of the holder, installing the holder including the guide pin having the reduced size in the gas supply mechanism, and rotating the gas injector to change a flow of gas through the gas injector.