Gas Jet Separation of Carrier-Workpiece Bonded Stacks
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Solution Overview
Problem
Current methods for debonding carrier-workpiece bonded stacks, especially for ultra-thin semiconductor wafers, are inefficient, prone to wafer breakage, and require complex mechanical mechanisms, leading to high costs and yield loss due to the fragility of thinned wafers.
Innovation Solution
A method involving a carrier-workpiece bonded stack with adjustable peeling strengths, where a gas jet with a circular sector shape is used to separate adjacent layers, reducing mechanical stress and employing techniques like irradiation, heating, or solvent treatment to adjust peeling strengths within a specific range to facilitate gentle separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Extent of automation
If complicated mechanical mechanisms such as robot arms are employed to manipulate the bonded stack, then automation is improved, but device wafer breakage and internal device damage increase
Solution Approach 1:
The patent replaces complicated mechanical mechanisms (robot arms) with a gas jet system that uses gas pressure to separate layers. The gas jet delivers controlled pressure at the interface between layers, enabling automated separation without direct mechanical contact that could cause breakage or internal damage to fragile thinned wafers
Solution Approach 2:
The invention employs pneumatic principles by using a gas jet to deliver controlled gas pressure at the layer interface. The gas jet system uses compressed gas to create separation force, replacing mechanical manipulation with a non-contact pneumatic method that is both automated and gentle on fragile wafers
2Productivity
If strong mechanical force is used to separate layers, then separation speed is improved, but device wafer breakage increases
Solution Approach 1:
The gas jet applies force locally at the interface between layers rather than applying strong mechanical force across the entire wafer. This localized gas pressure separation allows for controlled delamination at the bonding interface without subjecting the fragile thinned wafer to strong mechanical stress that would cause breakage
Solution Approach 2:
The invention changes the separation mechanism from mechanical force to gas pressure. By controlling gas flow rate and pressure parameters, the system achieves both rapid separation (high productivity) and gentle handling (low breakage) through precise parameter adjustment of the gas jet
3Extent of automation
If complicated mechanical mechanisms are used for debonding, then automation is improved, but device complexity and cost increase
Solution Approach 1:
The patent replaces complicated mechanical mechanisms (robot arms with sliding, lifting, and twisting capabilities) with a simpler gas jet system. The gas jet apparatus consists of a nozzle delivering controlled gas flow, dramatically reducing mechanical complexity while maintaining automated operation for layer separation
4Extent of automation
If complicated mechanical mechanisms are employed, then automation is improved, but operational difficulty increases
Solution Approach 1:
The gas jet system replaces complex mechanical operations (sliding, lifting, twisting) with a single controlled gas flow operation. The system is easier to operate because it requires only controlling gas pressure and flow rate, eliminating the need to coordinate multiple mechanical degrees of freedom and complex positioning operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances debonding efficiency, reduces wafer breakage, and simplifies the process, allowing for higher throughput while maintaining the integrity of the wafers, thus improving handling and processing efficiency.
Implementation Method 1
delivering a gas jet at the junction of two adjacent layers so as to separate the two adjacent layers from one another
Data Source
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AI summary
The present invention provides a method of separating a bonded stack (200) utilizing the force generated by a gas jet (204). The stack includes a carrier (201) and a thinned workpiece such as device wafer (202) that are bonded together through one or more layers therebetween. The gas jet (204) can separate two adjacent layers having peeling strength therebetween in the range of from 0.01 to 50.0 g/cm. The invention can simplify the procedure and provide high throughput in separating thinned wafer (202) from its carrier (201).