Gas Mixer Delivery Tube Layout for RPS Backstreaming Control
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Solution Overview
Problem
Conventional semiconductor processing systems face issues with backstreaming of deposition gases into the remote plasma source (RPS) unit, leading to intermittent plasma strike faults and on-wafer uniformity problems, which cannot be effectively addressed by simply flowing purge gas through the RPS unit due to turbulent flow patterns.
Innovation Solution
The implementation of a delivery tube with radially arranged apertures that mix purge gas and deposition gas, creating a positive pressure fluid flow to prevent backstreaming and ensure uniform gas distribution, utilizing a remote plasma source (RPS) unit with a faceplate and output manifold, and a delivery tube with angled apertures to facilitate the mixing and prevent RPS backstreaming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If purge gas is simply flowed through the RPS unit, then the deposition gas backstreaming is prevented, but the turbulent flow patterns cause on-wafer uniformity problems and cannot effectively eliminate backstreaming
Solution Approach 1:
The purge gas flow is segmented into multiple discrete outlets arranged radially around the delivery tube, allowing controlled introduction at specific locations rather than a single turbulent flow path
Solution Approach 2:
The purge gas outlets are positioned at specific locations around the delivery tube with angled orientations, creating localized positive pressure zones that prevent backstreaming while maintaining laminar flow characteristics for uniformity
2Manufacturing precision
If regular patterns of features such as apertures are used in chamber components, then symmetry and uniformity are promoted, but the ability to tune recipes for on-wafer adjustments is limited
Solution Approach 1:
The system enables dynamic recipe tuning by varying flow rates to different radially arranged purge gas outlets, allowing independent control of gas distribution patterns while maintaining the radial symmetry structure
Solution Approach 2:
The flow rates to individual purge gas outlets can be independently adjusted, enabling parameter changes in gas distribution patterns without altering the physical structure, thus achieving both uniformity and recipe flexibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces RPS backstreaming, eliminates strike faults, and achieves better uniformity of deposition gases on the wafer by ensuring that purge gas enters the processing chamber simultaneously with deposition gas, thereby preventing contamination and maintaining the RPS unit's functionality.
Implementation Method 1
a delivery tube with radially arranged apertures that mix purge gas and deposition gas
Implementation Method 2
creating a positive pressure fluid flow to prevent backstreaming
Implementation Method 3
a delivery tube with angled apertures to facilitate the mixing and prevent RPS backstreaming
Data Source
AI summary
A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.