Gas Nozzle With Angled Openings Suppressing Return Flows

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In semiconductor device manufacturing, it is challenging to ensure even flow of processing gases over substrates due to return flows generated by conventional gas nozzles, which affect film thickness uniformity and quality.

Innovation Solution

The use of a gas nozzle configuration with first and second openings arranged in a direction parallel to the substrate surface, where the second openings inject gas at a predetermined angle relative to the first openings, suppressing return flows and ensuring uniform gas distribution by dispersing gas flow across the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional nozzle supplies processing gas to a substrate, then the gas supply structure is simple, but return flows occur and film thickness uniformity deteriorates

Engineering Contradiction:
Improvefilm thickness uniformityVSAvoidnozzle structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The nozzle is divided into multiple gas supply openings (first openings and second openings) with different orientations. The first openings supply gas substantially perpendicular to the substrate, while the second openings supply gas at an oblique angle. This segmentation of gas supply directions eliminates return flows and achieves uniform film thickness without requiring complex external flow control mechanisms.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the nozzle provide different gas supply characteristics. The first openings provide vertical gas flow for base coverage, while the second openings provide oblique gas flow for edge coverage and return flow suppression. This local differentiation of gas supply quality ensures uniform film formation across the entire substrate surface.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If inert gas is supplied to make processing gas flow evenly, then gas distribution is improved, but the system complexity increases and even flow is still difficult to achieve

Engineering Contradiction:
Improvegas flow evennessVSAvoidgas supply system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The gas supply function is segmented into two distinct opening types within a single nozzle structure. The first openings handle primary vertical gas supply, while the second openings handle oblique gas supply for flow control. This integrated segmentation eliminates the need for separate inert gas supply systems while achieving even gas distribution.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The functions of processing gas supply and flow direction control are merged into a single nozzle structure with multiple opening types. The second openings serve dual purposes: supplying processing gas and controlling flow direction to prevent return flows. This merging simplifies the overall gas supply system while maintaining even gas distribution.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration prevents return flows, improving in-plane film thickness uniformity and enhancing the evenness of gas flow over the substrate, as demonstrated by simulation results showing reduced gas partial pressure differences and absence of return flows.

Implementation Method 1

a gas supplied from the first opening is supplied toward a center of the substrate, a gas supplied from the second opening is supplied toward a peripheral edge of the substrate

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

simulation results showing reduced gas partial pressure differences

Methodology Applied
Scientific EffectPressure gradient: Pressure Gradient

Data Source

PatentUS20230253222A1Gas supplier, processing apparatus, and method of manufacturing semiconductor device
Publication Date: 2023.08.10 KOKUSAI DENKI KK
  • US20230253222A1 patent drawing
  • US20230253222A1 patent drawing
  • US20230253222A1 patent drawing

AI summary

There is provided a technique that includes a first opening and a second opening which supply gases to a process chamber in which a substrate is arranged, and is configured such that: the first opening and the second opening are arranged in a direction parallel to a surface of the substrate, a gas supplied from the first opening is supplied toward a center of the substrate, a gas supplied from the second opening is supplied toward a peripheral edge of the substrate, and a direction of the gas supplied from the second opening forms a predetermined angle with respect to a direction of the gas supplied from the first opening.