Gas Nozzle Ejection Ports for Uniform Substrate Processing
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Solution Overview
Problem
Existing substrate processing technologies face challenges in achieving uniform in-plane processing of substrates during semiconductor device manufacturing, particularly due to issues with gas distribution and decomposition, leading to uneven film formation and potential film formation failures.
Innovation Solution
A substrate processing apparatus with a gas nozzle configuration that includes a first ejection port for a decomposition gas on an upper position and a second ejection port for a non-decomposition gas on a lower position, where the flow velocity of the second gas is higher than the first gas, ensuring uniform gas supply and suppressing vortex formation, thereby facilitating in-plane uniform processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If gas is supplied from a single ejection port, then the device complexity is reduced, but the in-plane uniformity of processing deteriorates
Solution Approach 1:
The gas nozzle is segmented into multiple ejection ports (first ejection port for decomposition gas, second ejection port for non-decomposition gas) positioned at different heights. This segmentation allows independent control of gas supply locations, enabling uniform distribution of reactive and carrier gases across the substrate surface, thereby improving in-plane processing uniformity without excessive complexity
Solution Approach 2:
The invention transitions from a single-point gas supply to a multi-dimensional gas supply system by positioning ejection ports at different vertical heights (upper and lower positions). This vertical dimensionality allows gases to converge and distribute uniformly across the substrate plane, achieving better processing uniformity while maintaining reasonable device complexity
2Productivity
If gas flow velocity is increased to improve mixing, then the productivity is improved, but vortex formation increases leading to non-uniform processing
Solution Approach 1:
The non-decomposition gas is supplied in advance from the second ejection port at the lower position to establish a stable upward flow pattern before the decomposition gas is introduced from the first ejection port. This preliminary action creates a controlled flow environment that prevents vortex formation while ensuring efficient gas mixing and rapid productivity
Solution Approach 2:
The invention changes the flow parameters by controlling the flow velocity of the non-decomposition gas to be higher than that of the decomposition gas. This parameter adjustment optimizes the mixing efficiency and prevents turbulent vortex formation, achieving both high productivity and uniform processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus ensures uniform gas distribution across the substrate, preventing film formation failures and achieving in-plane uniform processing, which is essential for consistent semiconductor device manufacturing.
Implementation Method 1
a first ejection port that ejects a first gas on an upper position in a direction perpendicular to a surface of the substrate and a second ejection port that ejects a second gas on a lower side position in the direction
Data Source
AI summary
There is provided a technique including a process chamber in which a substrate is processed, and a gas supplier including a first ejection port that ejects a first gas on an upper position in a direction perpendicular to a surface of the substrate and a second ejection port that ejects a second gas on a lower position in the direction.