Gas Nozzle Shutter Control for Low-Particle Film Deposition

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing film deposition technologies face challenges in reducing particle generation due to the deposition of reaction products in gas nozzles and plasma generators, which affects process efficiency and substrate quality.

Innovation Solution

A film deposition apparatus with a movable shutter mechanism that controls the injection of processing gases, ensuring that each gas is directed only where necessary, minimizing cross-contamination and deposition in non-reactive areas, thereby reducing particle generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If multiple gas nozzles are used to supply different processing gases, then film deposition capability is improved, but particle generation increases due to reaction product deposition in nozzles

Engineering Contradiction:
Improvefilm deposition capabilityVSAvoidparticle generation
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The gas supply system is segmented into multiple independent nozzles (first gas nozzle, second gas nozzle) positioned at different circumferential locations. Each nozzle supplies specific processing gases independently, allowing selective gas injection without cross-contamination. This segmentation prevents reaction products from depositing in the nozzles themselves, thereby reducing particle generation while maintaining multi-gas deposition capability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A shutter mechanism is introduced as an intermediary component between the gas nozzles and the processing chamber. The shutter selectively opens or closes gas holes in each nozzle based on the deposition process requirements. By controlling gas flow timing and location through this intermediary, reaction products are prevented from forming in the nozzles, reducing particle generation while enabling complex multi-gas film deposition

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If gas nozzles are positioned closer to substrates for better gas distribution, then deposition uniformity is improved, but reaction product deposition in nozzles increases

Engineering Contradiction:
Improvedeposition uniformityVSAvoidreaction product deposition
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

Multiple gas nozzles are distributed at different circumferential positions around the processing chamber, creating segmented gas injection zones. This segmentation allows each nozzle to be positioned optimally for its specific function while maintaining overall uniform gas distribution. The spatial segmentation prevents reaction products from accumulating in any single nozzle, reducing particle generation while achieving deposition uniformity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The shutter mechanism provides dynamic control over gas flow from each nozzle. By dynamically opening or closing gas holes based on process requirements, the system can adjust gas injection timing and duration. This dynamic control prevents reaction products from depositing in nozzles during idle periods while maintaining optimal gas distribution for uniform film deposition during active processing

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The shutter mechanism effectively reduces particle generation by minimizing the deposition of reaction products in gas nozzles and plasma generators, enhancing process efficiency and substrate quality.

Implementation Method 1

a second processing gas that reacts with the first processing gas inside the processing vessel to form a reaction product

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS20250336647A1Film deposition apparatus and film deposition method
Publication Date: 2025.10.30 TOKYO ELECTRON LTD
  • US20250336647A1 patent drawing
  • US20250336647A1 patent drawing
  • US20250336647A1 patent drawing

AI summary

A film deposition apparatus includes a processing vessel, a first nozzle having a first gas hole for injecting a first processing gas, a second nozzle having a second gas hole for injecting a second processing gas, a shutter to move between positions, a driving source to move the shutter, and a controller to control the driving source. The positions include a first position where the shutter does not cover the first gas hole but covers the second gas hole, and a second position where the shutter covers the first gas hole but does not cover the second gas hole. The controller controls the driving source to move the shutter to the first position when the first processing gas is injected from the first nozzle, and to the second position when the second processing gas is injected from the second nozzle.