Gas-Permeable Sealing Layer for Precise Cavity Etching
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Solution Overview
Problem
Conventional methods for producing device members with cavities, such as pressure sensors, face challenges in forming cavities with predetermined shapes due to material invasion and complexity, leading to inaccurate pressure measurements and increased production costs.
Innovation Solution
A device member comprising a semiconductor base, a non-conductive interlayer, and a gas-permeable sealing layer, where the interlayer is removed using etching gas penetrating through the sealing layer, allowing for the formation of a cavity with a predetermined shape without material invasion and simplifying the production process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional sealing layer is used to seal the opening portion, then the opening is sealed, but the sealing material invades into the gap and buries the gap, preventing accurate cavity formation
Solution Approach 1:
The sealing layer is designed with different properties in different regions: it is gas-permeable in the opening portion to allow etching gas passage, and gas-impermeable in other regions to prevent gas leakage. This local differentiation prevents sealing material invasion while enabling precise cavity formation through selective permeability.
Solution Approach 2:
The gas-permeable sealing layer acts as an intermediary between the opening portion and the etching gas. It allows the etching gas to penetrate through to remove the interlayer material while preventing the sealing material itself from invading the gap, thus mediating the cavity formation process without contamination.
2Manufacturing precision
If rigid conditions are imposed on the sealing layer to prevent material invasion, then cavity formation is enabled, but production complexity and costs increase
Solution Approach 1:
The sealing layer's gas permeability parameter is changed to a controlled value that allows etching gas passage while preventing material invasion. This parameter modification enables cavity formation under normal production conditions without requiring rigid or complex processing steps, thus reducing production complexity while maintaining precision.
3Shape
If the interlayer is removed to form a cavity, then the cavity structure is created, but the sealing layer must be gas-impermeable to prevent gas leakage
Solution Approach 1:
The sealing layer is designed with different gas permeability properties in different regions: the opening portion is gas-permeable to allow etching gas passage for cavity formation, while other portions are gas-impermeable to prevent gas leakage. This local quality differentiation simplifies the overall device structure while achieving the desired cavity structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of device members with stable, accurately shaped cavities, reducing production complexity and costs while ensuring high accuracy in pressure sensor measurements.
Implementation Method 1
a gas-permeable sealing layer, which is formed to seal the opening portion formed to the upper layer, wherein the cavity is a cavity which is formed by removing the interlayer with an etching gas that is penetrated through the sealing layer
Implementation Method 2
removing the interlayer with an etching gas that is penetrated through the sealing layer
Data Source
AI summary
A device member including a cavity, includes a base member, an interlayer, an upper layer, an opening portion, and a gas-permeable sealing layer. The base member includes a first semiconductor. The interlayer is formed on the base member and is non-conductive. The upper layer is formed on the interlayer and includes a second semiconductor. The opening portion is formed at the upper layer. The gas-permeable sealing layer is formed to seal the opening portion formed at the upper layer. The cavity is formed by removing the interlayer with an etching gas that penetrates through the sealing layer.


