Gas-Phase Cleaning of Semiconductor Residues
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Solution Overview
Problem
Current methods for cleaning semiconductor processing systems, particularly ion implantation and CVD systems, face challenges such as residue buildup leading to equipment instability, safety concerns due to toxic vapors, and high costs associated with hazardous materials like fluorine radicals and interhalogens, which require efficient and safe removal techniques.
Innovation Solution
The use of gas-phase reactive materials, like XeF2, for in situ and ex situ cleaning, which selectively react with residues, minimizing exposure to hazardous substances and extending equipment life by partial removal of deposits without damaging components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine radicals and interhalogens are used for cleaning, then cleaning effectiveness is improved, but safety concerns and costs increase due to toxic vapors and hazardous materials
Solution Approach 1:
The patent employs an inert atmosphere by using a sealed reaction chamber that isolates the hazardous cleaning chemicals (fluorine radicals and interhalogens) from the external environment. The chamber maintains a controlled atmosphere where these toxic substances can be introduced, perform cleaning functions on semiconductor components, and then safely contained or neutralized without exposing operators or surrounding equipment to harmful vapors.
2Productivity
If residue is not removed, then equipment operates continuously, but equipment instability increases due to residue buildup
Solution Approach 1:
The patent implements preliminary cleaning action by introducing reactive cleaning chemicals (fluorine radicals or interhalogens) into the reaction chamber before or between production cycles. This preliminary cleaning removes accumulated residue from semiconductor components, preventing equipment instability and ensuring reliable continuous operation. The cleaning process is performed in advance, so when production resumes, the equipment is in a clean, stable state.
3Reliability
If cleaning is performed frequently, then equipment stability is improved, but downtime increases
Solution Approach 1:
The patent achieves continuous cleaning action by maintaining a controlled environment where cleaning chemicals can continuously or periodically contact semiconductor components without requiring full system shutdown. The sealed reaction chamber allows cleaning to occur in-situ, and the system can quickly transition between cleaning and production modes, minimizing downtime while maintaining equipment stability through consistent residue removal.
4Reliability
If hazardous materials are used for cleaning, then cleaning power is improved, but environmental impact increases
Solution Approach 1:
The patent converts the harmful properties of fluorine radicals and interhalogens into beneficial cleaning power by carefully controlling their introduction and containment. These highly reactive substances, which would be dangerous in uncontrolled environments, are used in a sealed reaction chamber where their strong reactivity selectively removes residue from semiconductor components. The same properties that make them hazardous (high reactivity, toxic vapors) are harnessed to achieve superior cleaning, while the sealed system prevents environmental release.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes residues, enhances equipment stability and safety, reduces downtime, and minimizes environmental impact by using controlled gas-phase reactive materials that are selectively reactive with residues, thereby improving the operational efficiency and longevity of semiconductor processing systems.
Implementation Method 1
the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the system are constructed
Implementation Method 2
use of fluorinated xenon compounds, e.g., XeF2, as a vapor supporting a plasma in an ion source
Data Source
AI summary
A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.