Gas-phase Deposition of Radiation-Sensitive Polymeric Layers

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Solution Overview

Problem

Existing methods for forming patterned features on substrates, such as in electronic device manufacturing, face challenges in achieving thin, uniform radiation-sensitive layers, particularly with spin-on coating techniques that often result in inadequate thickness and uniformity.

Innovation Solution

A gas-phase method using a reactor system to form radiation-sensitive, patternable material by providing a substrate with a precursor, such as an organic or organosilicon compound, and employing chemical vapor deposition processes like plasma-enhanced chemical vapor deposition to create thin, uniform polymeric layers that can be selectively exposed and patterned using radiation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If spin-on coating technique is used to apply photoresist, then the process is simple and widely applicable, but the thickness and thickness uniformity are insufficient

Engineering Contradiction:
Improveease of coating processVSAvoidthickness uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent replaces the mechanical spin-coating process with a chemical vapor deposition process. Instead of using mechanical rotation to apply photoresist, the invention uses chemical reactions of precursor molecules to deposit the photoresist layer, achieving superior thickness uniformity and control while maintaining process simplicity through automated reactor systems.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental parameters of the coating process by transitioning from liquid-phase spin coating to gas-phase chemical vapor deposition. This parameter change enables precise control over film thickness and uniformity through controllable chemical reactions, while the automated nature of CVD maintains ease of manufacture.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If spin-on coating technique is used to apply photoresist, then the process is simple and widely applicable, but the thickness and thickness uniformity are insufficient

Engineering Contradiction:
Improveease of coating processVSAvoidthickness uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent replaces the mechanical spin-coating process with a chemical vapor deposition process. Instead of using mechanical rotation to apply photoresist, the invention uses chemical reactions of precursor molecules to deposit the photoresist layer, achieving superior thickness uniformity and control while maintaining process simplicity through automated reactor systems.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental parameters of the coating process by transitioning from liquid-phase spin coating to gas-phase chemical vapor deposition. This parameter change enables precise control over film thickness and uniformity through controllable chemical reactions, while the automated nature of CVD maintains ease of manufacture.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If gas-phase chemical vapor deposition is used to form polymeric material, then thin and uniform layers are achieved, but the process complexity increases

Engineering Contradiction:
Improvethickness uniformityVSAvoidreactor system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent designs the chemical vapor deposition reactor to perform multiple functions within a single system: depositing the polymeric photoresist layer, controlling thickness and uniformity, and enabling subsequent radiation exposure and development processes. This multi-functionality reduces overall process complexity despite the advanced deposition technique.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent optimizes chemical vapor deposition parameters such as temperature, pressure, and precursor flow rates to achieve thin, uniform layers while managing reactor complexity. By carefully controlling these parameters, the system achieves high manufacturing precision without requiring overly complex equipment configurations.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of thin, uniform, radiation-sensitive patternable material, improving the precision and consistency of patterned features on substrates, addressing the limitations of traditional spin-on coating techniques.

Implementation Method 1

The step of forming the polymeric material comprises a chemical vapor deposition process, such as a plasma-enhanced chemical vapor deposition process

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

using the precursor, forming a polymeric material on a surface of the substrate... the step of forming the polymeric material comprises a chemical vapor deposition process, such as a plasma-enhanced chemical vapor deposition process

Methodology Applied
Scientific EffectPlasma-enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 3

exposing a portion of polymeric material to radiation to form exposed regions and unexposed regions within the polymeric material

Methodology Applied
Scientific EffectRadiation exposure: Radiation

Data Source

PatentUS20230324803A1Gas-phase method of forming radiation-sensitive patternable material
Publication Date: 2023.10.12 ASM IP HLDG BV
  • US20230324803A1 patent drawing
  • US20230324803A1 patent drawing
  • US20230324803A1 patent drawing

AI summary

Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.