Gas Distribution Plate Layout for Thin Film Thickness Control
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Solution Overview
Problem
Existing substrate processing apparatuses struggle to maintain uniform thickness and adjust the shape of hard mask thin films deposited on substrates, particularly in the context of miniaturization processes in semiconductor manufacturing.
Innovation Solution
A substrate processing apparatus is designed with a gas distribution plate and a gas supply unit that allows for the adjustment of process gas supply from both upper and side regions of the processing space, enabling control over the thickness and shape of the deposited thin film through precise gas distribution and injection angles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional gas supply methods are used, then the deposition process is simple, but the uniformity of thin film thickness cannot be maintained
Solution Approach 1:
The gas supply system is segmented into multiple independent channels: a first gas supply channel for main gas and a second gas supply channel for reaction gas. This segmentation allows independent control of gas flows to different regions of the processing space, enabling precise thickness uniformity control without excessive overall system complexity.
Solution Approach 2:
Different regions of the processing space are provided with different gas compositions and flow rates through the segmented supply channels. The main gas is supplied to certain regions while reaction gas is supplied to other regions, creating local quality variations that control the deposition rate and achieve uniform thin film thickness across the substrate.
2Shape
If gas supply is increased to adjust film shape, then the deposition speed increases, but the thickness uniformity deteriorates
Solution Approach 1:
The system applies local quality by supplying main gas and reaction gas to different spatial regions independently. By adjusting the local gas composition and flow rate in specific areas, the film shape can be controlled (convex or concave) while maintaining overall thickness uniformity through coordinated control of multiple gas channels.
Solution Approach 2:
The system changes multiple parameters simultaneously: gas composition (main gas vs. reaction gas), gas flow rate, and spatial distribution. By independently adjusting these parameters in different regions through the segmented gas supply channels, both film shape and thickness uniformity can be controlled without trade-offs.
3Adaptability or versatility
If single gas supply channel is used, then the system is simple, but the adaptability to different deposition requirements is limited
Solution Approach 1:
The gas supply system is divided into segmented channels (first gas supply channel for main gas, second gas supply channel for reaction gas) that can be independently controlled. This segmentation provides adaptability to different deposition requirements while keeping each individual channel relatively simple, avoiding the need for a single complex multi-functional channel.
Solution Approach 2:
The segmented gas supply system achieves multi-functionality: it can control deposition rate, adjust film shape (convex/concave), maintain thickness uniformity, and adapt to different deposition patterns. The first and second gas supply channels together perform multiple functions that would require a complex single-channel system, thereby increasing versatility without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively adjusts the average thickness and shape of the thin film by optimizing gas supply, achieving uniform or varied deposition patterns as needed.
Implementation Method 1
an upper coil provided on an upper part of the dielectric window, the upper coil being configured to receive Radio Frequency (RF) power and to generate plasma in the processing space
Implementation Method 2
a gas distribution plate provided on a lower part of the dielectric window and configured to supply main gas or reaction gas to the processing space, wherein a flow space in which the main gas or the reaction gas flows, is provided between the gas distribution plate and the dielectric window
Implementation Method 3
a gas supply unit for supplying the main gas or the reaction gas in the processing space through a side wall of the chamber
Implementation Method 4
the substrate processing apparatus which is configured to deposit a hard mask thin film on a substrate using inductively coupled plasma
Data Source
AI summary
A substrate processing apparatus includes a chamber, a dielectric window, an upper coil, and a gas distribution plate. The chamber provides a processing space for a substrate. The dielectric window is provided on an upper part of the chamber and maintains a pressure inside the chamber. The upper coil is provided on an upper part of the dielectric window and receives Radio Frequency (RF) power to generate plasma in the processing space. The gas distribution plate is provided on a lower part of the dielectric window and supplies main gas or reaction gas to the processing space. A flow space in which the main gas or the reaction gas flows is provided between the gas distribution plate and the dielectric window, and the main gas or the reaction gas is distributed through the flow space to be supplied to the processing space.