Semiconductor Gas Sensor Control Electrode Integration
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Solution Overview
Problem
Existing semiconductor gas sensors with control electrodes spaced from the channel region by an air gap require separate electrical connections, which are costly and increase the overall height of the sensor, whereas the control electrode and semiconductor body are not formed in one piece, leading to mechanical and electrical connectivity challenges.
Innovation Solution
A semiconductor gas sensor with a control electrode separated from the channel region by a gap, where the control electrode is connected to a reference potential using a conductive adhesive that also provides mechanical support, eliminating the need for additional electrical contacting and allowing for integration into the wafer level production process, reducing production costs and sensor height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate electrical connections (bonding wires) are used to connect the control electrode to the semiconductor body, then electrical connection is achieved, but production costs increase and reliability decreases
Solution Approach 1:
The patent merges the mechanical support function and electrical connection function into a single integrated structure. The support structures (70, 80) simultaneously provide mechanical support for the control electrode (100) and establish electrical connections to the reference potential, eliminating the need for separate bonding wires and reducing overall device complexity.
Solution Approach 2:
The support structures serve multiple functions: they mechanically support the control electrode above the channel region, provide electrical connection to the reference potential, and define the gap distance. This multi-functionality reduces the number of separate components needed and simplifies the overall device architecture.
2Ease of manufacture
If separate electrical connections (bonding wires) are used to connect the control electrode to the semiconductor body, then electrical connection is achieved, but production costs increase
Solution Approach 1:
The patent merges the mechanical support function and electrical connection function into a single integrated structure. The support structures (70, 80) simultaneously provide mechanical support for the control electrode (100) and establish electrical connections to the reference potential, eliminating the need for separate bonding wires and reducing overall device complexity.
3Length of stationary object
If the control electrode is connected using additional bonding wires, then electrical connection is achieved, but the overall height increases
Solution Approach 1:
The patent merges the mechanical support function and electrical connection function into a single integrated structure. The support structures (70, 80) simultaneously provide mechanical support for the control electrode (100) and establish electrical connections to the reference potential, eliminating the need for separate bonding wires and reducing overall device complexity.
4Device complexity
If the control electrode is mechanically connected to the semiconductor body, then mechanical support is achieved, but electrical connection requires additional components
Solution Approach 1:
The support structures serve multiple functions: they mechanically support the control electrode above the channel region, provide electrical connection to the reference potential, and define the gap distance. This multi-functionality reduces the number of separate components needed and simplifies the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables reliable mechanical and electrical connection of the control electrode to the semiconductor body, reducing production costs and increasing the reliability of the gas sensors while minimizing the overall height, and allows for the production of the gas sensors to be integrated into the integrated circuit process.
Implementation Method 1
the control electrode is connected to a reference potential through a conductive adhesive or conductive layer
Implementation Method 2
The gas-sensitive layer covers at least a part, preferably the entire channel region
Data Source
Figure 1~2
Figure 3~4
AI summary
Semiconductor gas sensor based on an integrated field-effect transistor with a semiconductor body having a passivation layer formed on the surface of the semiconductor body, which has a gas-sensitive control electrode separated from a channel region by a gap and is designed as a suspended gate field-effect transistor (SGFET), or the control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field-effect transistor designed as a capacitive controlled field-effect transistor (CCFET), and the control electrode has a semiconductor support layer with an adhesive layer and a gas-sensitive layer on the adhesive layer, and is connected to a reference potential, and the surface of the gas-sensitive layer faces the channel region or the second plate.and a support area with a first support structure having a first bearing area and a second support structure having a second bearing area is provided, wherein a connection area is provided on the surface of the semiconductor body and the support area is arranged within the connection area, and the connection area has a first connection area and a second connection area, and the first connection area has an electrical connection and a frictional connection with the control electrode by means of a first connecting means, and the second connection area has at least a frictional connection with the control electrode by means of a second connecting means.