Gas Supply System with Dynamic Flow Control for Substrate Processing

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Solution Overview

Problem

Conventional gas supply systems for substrate processing apparatuses have complex line configurations and prolonged gas delivery times due to individual gas supply systems for each portion of the substrate, leading to inefficient throughput and in-surface uniformity.

Innovation Solution

A gas supply system with a processing gas supply unit, branch lines, and an additional gas supply unit, where the additional gas is initially supplied at a higher flow rate than the set flow rate to rapidly increase inner pressure and then adjusted to the set flow rate, simplifying the line configuration and control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If individual gas supply systems are used for each portion of the substrate, then in-surface uniformity can be improved, but line configuration becomes complex and control burden increases

Engineering Contradiction:
Improvein-surface uniformityVSAvoidline configuration complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The processing chamber is divided into multiple gas chambers (first gas chamber, second gas chamber, etc.), each supplied with processing gas through separate branch lines from a common processing gas supply line. This segmentation allows independent flow rate control for each region while maintaining a relatively simple common supply line configuration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple processing gas supply lines are merged into a single common processing gas supply line that branches to various gas chambers. This merging reduces the overall complexity of the gas supply system while still allowing individual control through branch flow control units.

Inventive Principle:
Principle #5Merging (Combining)

2Stability of the object's composition

If additional gas is supplied at a very small flow rate, then gas concentration stability can be achieved, but time required for gas to reach processing chamber increases

Engineering Contradiction:
Improvegas concentration stabilityVSAvoidgas delivery time
Core Design Contradiction:
Stability of the object's compositionVSLoss of time

Solution Approach 1:

Before supplying additional gas at the target small flow rate, the system first supplies additional gas at a larger initial flow rate to rapidly increase the inner pressure of the additional gas supply line. This preliminary action ensures that the additional gas reaches the processing chamber quickly, after which the flow rate is reduced to the target small value for stable concentration control.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The additional gas flow rate is dynamically adjusted in two stages: initially supplied at a larger flow rate to quickly pressurize the supply line and deliver gas to the chamber, then switched to a smaller target flow rate to maintain stable gas concentration. This dynamic adjustment optimizes both delivery speed and concentration stability.

Inventive Principle:
Principle #15Dynamics

3Manufacturing precision

If multiple gas supply lines are used for different portions, then local gas concentration control is improved, but space required for lines increases

Engineering Contradiction:
Improvelocal gas concentration controlVSAvoidspace for gas lines
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

Multiple processing gas supply lines are merged into a single common processing gas supply line that serves multiple gas chambers through branching. This merging significantly reduces the total space required for gas lines while maintaining the capability for local gas concentration control through individual branch lines and flow control units.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS8790529B2Gas supply system, substrate processing apparatus and gas supply method
Publication Date: 2014.07.29 TOKYO ELECTRON LTD
  • US8790529B2 patent drawing
  • US8790529B2 patent drawing
  • US8790529B2 patent drawing

AI summary

A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.