Semiconductor Gasbox Plenum Layout for Tunable Wafer Gas Delivery
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Solution Overview
Problem
Conventional semiconductor processing chambers face challenges in achieving uniformity and adjustability of precursor delivery across substrate surfaces, limiting the ability to tune recipes for on-wafer adjustments and resulting in non-uniform film properties and in-plane distortion.
Innovation Solution
The semiconductor processing chambers incorporate a gasbox with a first plate defining a central aperture and annular recess, coupled with a second annular plate to form a plenum, along with recessed channels and lateral channels, allowing for controlled dilution and distribution of precursors and inert gases to inner and outer substrate regions, enabling adjustable precursor delivery.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If regular patterns of features such as apertures are used in chamber components to promote symmetry and uniformity, then uniformity of material delivery is improved, but the ability to tune recipes for on-wafer adjustments is limited
Solution Approach 1:
The gasbox is divided into multiple functional zones with different aperture patterns: a first region with a first pattern of apertures for delivering first precursor, and a second region with a second pattern of apertures for delivering second precursor. This segmentation allows independent control and tuning of each precursor delivery pattern, achieving both uniformity and adaptability for on-wafer adjustments.
Solution Approach 2:
Different regions of the gasbox are designed with locally optimized aperture patterns tailored to specific delivery requirements. The first region has apertures configured for uniform distribution of first precursor, while the second region has apertures configured for uniform distribution of second precursor. This local quality approach enables each region to be independently tuned for its specific function while maintaining overall system uniformity.
2Ease of manufacture
If conventional gasbox designs are used, then structural simplicity is maintained, but controlled dilution and distribution of precursors to inner and outer substrate regions is limited
Solution Approach 1:
The gasbox is segmented into multiple functional regions (first region and second region) with distinct aperture patterns and plenum structures. This segmentation enables controlled dilution and distribution of different precursors to specific substrate regions (inner and outer) while maintaining a relatively simple monolithic plate structure that is manufacturable.
Solution Approach 2:
The invention introduces vertical plenum chambers within the gasbox plate structure, adding a third dimension to the aperture distribution system. This allows precursors to be delivered through vertically stacked plenum regions, enabling controlled dilution and distribution patterns that would be difficult to achieve with simple planar aperture arrays, while still maintaining ease of manufacture through additive manufacturing or similar processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances film formation and removal uniformity, improves film properties, and allows for precise adjustments to address in-plane distortion issues, providing improved semiconductor device quality.
Implementation Method 1
allowing for controlled dilution and distribution of precursors and inert gases to inner and outer substrate regions
Data Source
AI summary
Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.