Gasbox Plenum Layout for Uniform Wafer Gas Distribution
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Solution Overview
Problem
Conventional semiconductor processing chamber components struggle to provide uniform delivery of precursors and inert gases across substrate surfaces, leading to non-uniform film formation and removal, especially as device features shrink, and are limited in their ability to adjust processes for in-plane distortion and film property challenges.
Innovation Solution
The semiconductor processing chambers incorporate a gasbox with a first plate defining a central aperture and annular recess, coupled with a second annular plate to form a plenum, along with recessed channels and lateral channels that allow for controlled dilution and distribution of precursors, enabling adjustable delivery to inner and outer substrate regions, and a manifold with isolated zones for fluid access, facilitating improved uniformity and film properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If regular patterns of features such as apertures are used in chamber components, then uniformity of material delivery is improved, but the ability to tune recipes for on-wafer adjustments is limited
Solution Approach 1:
The gasbox is divided into multiple functional zones with different aperture patterns. The first plate contains a central aperture for precursor delivery, while the second plate contains multiple apertures arranged in specific patterns for inert gas delivery. This segmentation allows independent control and optimization of different gas delivery functions, enabling both uniformity and process tunability.
Solution Approach 2:
Different regions of the gasbox are designed with different aperture characteristics. The central aperture in the first plate provides focused precursor delivery to the substrate center, while the annular pattern of apertures in the second plate provides uniform inert gas distribution across the substrate periphery. This local differentiation enables region-specific process optimization.
2Device complexity
If chamber components are designed with fixed aperture patterns, then structural simplicity is maintained, but the ability to address in-plane distortion and film property challenges is reduced
Solution Approach 1:
The gas delivery system enables dynamic process adjustment by controlling the flow rates through different aperture patterns. Operators can tune the relative amounts of precursor and inert gas delivered to different substrate regions in real-time, allowing adaptation to various film formation challenges without changing the physical structure of the gasbox.
Solution Approach 2:
The gasbox design serves multiple functions: the central aperture delivers precursor gases for film formation, the annular apertures deliver inert gases for process control, and the combined system addresses both uniformity and in-plane distortion issues. This multi-functionality is achieved within a relatively simple structural framework.
3Ease of manufacture
If conventional gas delivery systems are used, then ease of manufacture is maintained, but uniform delivery of precursors and inert gases across substrate surfaces is not achieved
Solution Approach 1:
The gas delivery system is segmented into multiple plates with specific aperture patterns. The first plate with its central aperture and the second plate with annular apertures can be manufactured separately using standard fabrication techniques, then assembled together. This segmentation maintains ease of manufacture while achieving uniform gas delivery through the coordinated aperture patterns.
Data Source
AI summary
Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.