Gate-All-Around Transistor Sacrificial Layer Design
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Solution Overview
Problem
Highly integrated semiconductor devices face performance issues due to characteristics like the short channel effect and narrow width effect, which negatively impact their speed and integration capabilities.
Innovation Solution
A semiconductor device with a gate-all-around transistor design is developed, featuring a fin structure, sacrificial layer patterns made of semiconductor or insulating materials, and a gate electrode layer that surrounds the active layer pattern, along with a source/drain structure separated by a spacer, to enhance performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If highly integrated semiconductor devices are developed, then integration capability is improved, but short channel effect and narrow width effect worsen performance
Solution Approach 1:
The patent transitions from planar gate structures to three-dimensional gate-all-around structures that completely surround the channel region. This dimensional change enables the gate to control the channel from top, bottom, and sidewalls simultaneously, providing superior electrostatic control that suppresses short channel effects while maintaining high integration density
Solution Approach 2:
The gate structure is nested around the channel region in a concentric arrangement, with the gate dielectric layer and gate electrode layer forming nested structures that completely enclose the active layer pattern. This nested configuration maximizes gate control over the channel while minimizing the device footprint for high integration
2Power
If gate-all-around structure is implemented, then operating current increases, but manufacturing complexity increases
Solution Approach 1:
The sacrificial layer pattern is formed in advance before the gate dielectric and gate electrode layers are deposited. This preliminary action creates a mold structure that guides the subsequent layer formation processes, enabling the complex gate-all-around structure to be built systematically rather than attempting to form it directly in a single step
Solution Approach 2:
The sacrificial layer pattern acts as an intermediary structure during manufacturing. It serves as a temporary mold that defines the gate structure geometry, facilitates the formation of the gate dielectric and electrode layers, and is subsequently removed after serving its purpose. This intermediary approach simplifies the manufacturing of complex gate-all-around structures
3Device complexity
If sacrificial layer pattern is used, then gate electrode layer can surround active layer pattern, but additional manufacturing steps are required
Solution Approach 1:
The sacrificial layer pattern performs multiple functions: it serves as a structural mold for the gate-all-around configuration, provides a platform for depositing the gate dielectric and electrode layers, and acts as a spacer definition layer. This multi-functionality reduces the need for separate dedicated structures for each function, streamlining the overall manufacturing process despite the complex gate configuration
Data Source
AI summary
A semiconductor device includes a fin structure disposed on a substrate, a sacrificial layer pattern disposed on the fin structure, an active layer pattern disposed on the sacrificial layer pattern, and a gate dielectric layer and a gate electrode layer extending through the sacrificial layer pattern and surrounding a portion of the active layer pattern.