Gate-All-Around Transistor Threshold Voltage Control
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Solution Overview
Problem
Current semiconductor devices with gate-all-around structures face challenges in adjusting threshold voltage, which affects device performance and scalability.
Innovation Solution
The semiconductor device incorporates a substrate with multiple wire patterns and gate electrodes, including metal oxide films, to vary the threshold voltage by adjusting the width and position of gate spacers and electrodes, allowing for precise control of the gate insulating films and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gate-all-around structure is used to enhance device density and current control, then current control capability and short channel effect suppression are improved, but threshold voltage adjustment capability deteriorates
Solution Approach 1:
The gate electrode is segmented into multiple independent gate electrodes (first gate electrode, second gate electrode, third gate electrode) with different widths. Each gate electrode can be independently controlled to adjust the threshold voltage of the transistor while maintaining the gate-all-around structure's current control capability.
Solution Approach 2:
Different regions of the gate structure have different widths and configurations. The first gate electrode has a first width, the second gate electrode has a second width, and the third gate electrode has a third width. This local variation in geometry enables threshold voltage adjustment without compromising the overall gate-all-around structure's effectiveness.
2Adaptability or versatility
If gate electrode width is increased to improve threshold voltage control, then threshold voltage adjustment is improved, but device area increases
Solution Approach 1:
The invention transitions from a single-dimensional gate width control to a multi-dimensional approach by stacking gate electrodes at different heights and positions. The gate electrodes are arranged in a three-dimensional configuration around the channel, allowing threshold voltage control without increasing the planar footprint of the device.
Data Source
AI summary
There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure. The semiconductor device includes a substrate including a first region and a second region, a first wire pattern provided on the first region of the substrate and spaced apart from the substrate, a second wire pattern provided on the second region of the substrate and spaced apart from the substrate, a first gate insulating film surrounding a perimeter of the first wire pattern, a second gate insulating film surrounding a perimeter of the second wire pattern, a first gate electrode provided on the first gate insulating film, intersecting with the first wire pattern, and including a first metal oxide film therein, a second gate electrode provided on the second gate insulating film and intersecting with the second wire pattern, a first gate spacer on a sidewall of the first gate electrode, and a second gate spacer on a sidewall of the second gate electrode.