Gate Formation Control via Real-Time CD Feedback
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing processes lack a cost-effective and efficient method for controlling gate critical dimensions (CDs) and profiles, leading to variations that affect transistor performance and yield, as existing measurement tools do not provide immediate feedback for adjusting lithography steps and etch processing.
Innovation Solution
A gate formation control system that measures gate CDs at specific regions, particularly 'on-fin' locations, to correlate with etching recipes, allowing for real-time adjustments to achieve targeted gate dimensions and profiles, thereby improving uniformity across wafers and chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional measurement equipment is used to measure gate CDs and profiles, then measurement capability is provided, but immediate feedback for adjusting lithography and etch processing is not achieved
Solution Approach 1:
The patent implements a feedback mechanism where measurement data from gate CDs and profiles is immediately fed back to adjust lithography and etch processing parameters. This closed-loop system allows real-time process optimization, where measurement results directly influence subsequent processing steps, eliminating the time delay present in conventional sequential measurement-adjustment approaches
2Ease of operation
If process control settings are made universal, then ease of operation is improved, but variations due to unknown process factors cannot be addressed
Solution Approach 1:
The patent transitions from static universal process control settings to dynamic, adaptive control. The system continuously adjusts lithography and etch parameters based on real-time measurement feedback, allowing the process control to adapt to varying conditions and unknown factors while maintaining ease of operation through automated adjustment mechanisms
3Manufacturing precision
If gate formation control is improved, then manufacturing precision is enhanced, but production throughput may be reduced
Solution Approach 1:
The patent maintains continuous production throughput by integrating measurement and adjustment steps into the existing process flow without creating bottlenecks. The feedback loop operates in real-time during continuous manufacturing, allowing precision control to be achieved without interrupting or significantly slowing down the production line
Data Source
AI summary
A method of controlling gate formation of a semiconductor device includes acquiring a correlation between gate critical dimensions (CDs) and etching recipes for forming gate trenches; measuring a gate CD on a target wafer; determining an etching recipe based on the correction and the measured gate CD; and performing an etching process on the target wafer to form a gate trench with the determined etching recipe.