Gate Driving Circuit Layout for Low-Stress Multi-Line Scan Output

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Solution Overview

Problem

The size of the gate driving circuit in display devices is increased by the number of transistors in each stage circuit, leading to potential leakage currents, image quality degradation, and reduced lifespan due to voltage stress and frequent driving.

Innovation Solution

A gate driving circuit with reduced transistors in stage circuits and adjusted voltage levels to minimize stress, using dummy stage circuits and a specific connection structure for carry signal lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the number of transistors in each stage circuit is increased, then the gate driving circuit can generate gate signals for more gate lines, but the size of the gate driving circuit increases

Engineering Contradiction:
Improvegate signal generation capabilityVSAvoidgate driving circuit size
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The gate driving circuit is divided into multiple stage circuits that operate sequentially. Each stage circuit generates gate signals for a subset of gate lines, and the stages are connected through carry signal lines that coordinate the operation between stages. This segmentation allows the circuit to handle more gate lines without proportionally increasing the size of each individual stage circuit.

Inventive Principle:
Principle #1Segmentation

2Adaptability or versatility

If the number of transistors in each stage circuit is increased, then more gate signals can be generated, but leakage current increases and image quality degrades

Engineering Contradiction:
Improvegate signal generation capabilityVSAvoidleakage current and image quality
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The first stage circuit includes dummy stage circuits that perform preliminary operations before the main stage circuits operate. These dummy circuits prepare the carry signal lines and establish proper voltage levels in advance, ensuring that when the main stage circuits activate, they do so with proper initialization that prevents leakage current and ensures signal integrity for reliable display operation.

Inventive Principle:
Principle #10Preliminary action

3Productivity

If transistors are driven more times, then more gate signals can be generated, but transistor degradation increases and lifespan shortens

Engineering Contradiction:
Improvegate signal generation rateVSAvoidtransistor lifespan
Core Design Contradiction:
ProductivityVSDuration of action of stationary object

Solution Approach 1:

The stage circuits operate in periodic sequences where each stage activates in turn based on clock signals. The carry signal lines coordinate this periodic operation, allowing efficient gate signal generation while distributing the operational burden across multiple stages rather than continuously stressing a single transistor configuration, thereby extending overall circuit lifespan.

Inventive Principle:
Principle #19Periodic action

Data Source

PatentUS20260031052A1Gate driving circuit and display device including gate driving circuit
Publication Date: 2026.01.29 LG DISPLAY CO LTD
  • US20260031052A1 patent drawing
  • US20260031052A1 patent drawing
  • US20260031052A1 patent drawing

AI summary

The present disclosure relates to a gate driving circuit and a display device including the gate driving circuit, and more particularly, to a gate driving circuit having a reduced size and a display device including the gate driving circuit. The gate driving circuit comprises a plurality of dummy stage circuits and stage circuits, which supply gate signals to each gate line and comprise a Q node, a QH node, and a QB node. A gate signal output circuit included in each of the stage circuits can output first to j-th gate signals based on first to j-th scan clock signals or a first low voltage according to the voltage level of the Q node or the voltage level of the QB node.