Gate Contact Layout for Dense Semiconductor Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in achieving higher integration and operating speed while maintaining reliability, particularly in adjusting the size of source/drain contacts relative to inter-gate spacing to enhance performance.
Innovation Solution
A semiconductor device design that includes strategically positioned gate structures with varying inter-gate distances and contact widths, utilizing interlayer insulating films and liners to optimize contact geometry and stress characteristics, allowing for adjusted contact sizes and stress distribution between gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the inter-gate spacing is reduced to increase integration density, then the integration density is improved, but the contact size must be adjusted to maintain reliability
Solution Approach 1:
The patent applies local quality by differentiating contact dimensions based on local inter-gate spacing conditions. Contacts are categorized into first dimensions for gate pairs with first spacing and second dimensions for gate pairs with second spacing, allowing each contact to be optimally sized for its specific local geometry while maintaining overall high integration density
Solution Approach 2:
The patent changes the contact size parameter according to the inter-gate spacing parameter. By establishing a relationship where contact dimensions are adjusted based on the spacing between adjacent gates, the patent maintains reliable electrical contact across varying integration densities without requiring a uniform contact size throughout the device
2Reliability
If the contact size is increased to improve reliability, then the contact reliability is improved, but the integration density decreases
Solution Approach 1:
The patent avoids the need to uniformly increase contact size across the entire device by applying local quality. Instead, each contact is sized according to its specific inter-gate spacing requirements, ensuring sufficient reliability for each local configuration while preventing unnecessary contact area expansion that would reduce overall integration density
Solution Approach 2:
The patent dynamically adjusts contact size parameters based on inter-gate spacing parameters, ensuring that contacts are only as large as necessary for reliable operation. This prevents the integration density from decreasing due to uniformly oversized contacts while still maintaining adequate contact reliability where needed
3Speed
If the inter-gate spacing is reduced to increase operating speed, then the operating speed is improved, but the contact geometry must be optimized to maintain performance
Solution Approach 1:
The patent applies local quality by tailoring contact geometry to local inter-gate spacing conditions. Contacts are designed with specific dimensions matched to their corresponding gate pair spacing, ensuring optimal electrical performance and signal speed for each local region while maintaining manufacturable precision through clear dimensional specifications
Solution Approach 2:
The patent changes contact geometry parameters in response to inter-gate spacing parameters to optimize operating speed. By establishing dimensional relationships between contacts and their associated gate structures, the patent ensures that signal transmission performance is optimized for varying spacing conditions without requiring ultra-precise manufacturing beyond standard capabilities
Data Source
AI summary
A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.