Standard Cell Gate Contact Layout for Smaller Semiconductor Area
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Solution Overview
Problem
The existing layout designs of standard cells in semiconductor devices occupy a significant area, limiting the miniaturization and electrical performance of integrated circuits, and existing solutions do not effectively reduce the size of these cells.
Innovation Solution
The semiconductor device incorporates gate contact structures adjacent to a slot contact structure, with the gate contact structures being shorter than the isolation structure, allowing for a more compact layout design by simplifying the placement of gate and slot contact structures between active regions and reducing the overall area occupied.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If traditional layout designs of standard cells are used, then the electrical performance can be maintained, but the area occupied by the standard cell is large
Solution Approach 1:
The gate contact structure extends in the first direction (vertical to gate line) rather than only in the second direction (parallel to gate line), utilizing the third dimension (depth/vertical stacking) to reduce the footprint area while maintaining electrical connection functionality
Solution Approach 2:
The gate contact structure is positioned within or adjacent to the slot contact structure, with the gate contact structure's projection overlapping or abutting the slot contact structure, effectively nesting functional elements to minimize area occupation
2Reliability
If the gate contact structure is made longer to ensure electrical connection, then the reliability is improved, but the area occupied increases
Solution Approach 1:
The gate contact structure utilizes vertical extension (first direction) rather than horizontal extension (second direction) to achieve sufficient electrical connection length while minimizing the horizontal footprint area
Solution Approach 2:
The gate contact structure has different length characteristics in different directions: longer in the first direction (vertical) for electrical connection reliability, and shorter in the second direction (horizontal) for area reduction
Data Source
Figure 1
Figure 2
Figure 3~4
AI summary
A semiconductor device (101) includes a substrate (10) and, in a plan view, an isolation structure (IS), a first gate structure (GS1), a second gate structure (GS2), a first slot contact structure (SC1), a first gate contact structure (GC1), and a second gate contact structure (GC2). The substrate includes a first active region (A1) and a second active region (A2) elongated in a first direction (D1) respectively. The first gate structure, the second gate structure, and the first slot contact structure are elongated in a second direction (D2) respectively. The first gate contact structure and the second gate contact structure are disposed at two opposite sides of the first slot contact structure in the first direction respectively and disposed between the first active region and the second active region in the second direction. A length of the first gate contact structure and a length of the second gate contact structure in the second direction are less than a length of the isolation structure in the second direction.