Gate Contact Low-k Liner for Reduced Gate-to-Source/Drain Capacitance
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Solution Overview
Problem
The challenge in semiconductor devices is to reduce the capacitance between the gate and source/drain contacts, which affects the performance and reliability of nanostructure transistors.
Innovation Solution
Incorporating one or more low-k dielectric layers as a liner or body laterally between the gate contact and the source/drain contact, which reduces the capacitance and enhances transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the distance between gate contact and source/drain contact is reduced to improve device integration, then device density increases, but capacitance between gate and source/drain contacts increases causing device failure
Solution Approach 1:
A low-k dielectric layer is introduced as an intermediary material between the gate contact and source/drain contact. This low-k dielectric layer has a dielectric constant (k) less than 5, which reduces the capacitance between the gate and source/drain contacts compared to conventional high-k dielectric materials. The low-k dielectric layer is positioned in the region laterally between the gate contact and source/drain contact, enabling reduced capacitance while maintaining close spacing for high device density.
2Ease of manufacture
If conventional dielectric materials are used between gate and source/drain contacts, then manufacturing is simple, but capacitance is too high causing device failure
Solution Approach 1:
The dielectric constant parameter of the material between gate and source/drain contacts is changed from conventional high-k materials to low-k dielectric materials with k < 5. This parameter change reduces the capacitance between gate and source/drain contacts, preventing device failure while still allowing for standard semiconductor manufacturing processes.
3Reliability
If low-k dielectric layer is added to reduce capacitance, then device reliability improves, but device complexity increases
Solution Approach 1:
The low-k dielectric layer is applied locally only in the critical region between the gate contact and source/drain contact, rather than throughout the entire device structure. This localized application reduces capacitance where it matters most while minimizing the overall structural complexity and material usage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reduced capacitance allows for improved operation of semiconductor devices without failure due to gate-source/drain capacitance, leading to enhanced performance and reliability.
Implementation Method 1
one or more low-k dielectric layers which reduces a capacitance between a gate contact and a source/drain contact
Data Source
AI summary
A device includes a substrate. A channel region of a transistor overlies the substrate and a source/drain region is in contact with the channel region. The source/drain region is adjacent to the channel region along a first direction. A source/drain contact is disposed on the source/drain region. A gate electrode is disposed on the channel region and a gate contact is disposed on the gate electrode. A first low-k dielectric layer is disposed between the gate contact and the source/drain contact along the first direction.