Gate Contact Plug Over Active Region for Chip Area Optimization
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Solution Overview
Problem
Conventional MOS device manufacturing processes require gate contact plugs to be formed outside the active region, leading to inefficient use of chip area and limited flexibility in routing overlying metal lines due to their placement over insulation regions.
Innovation Solution
A novel layout where at least a portion of the gate contact plug is directly over and vertically overlapping the active region, allowing for more flexible routing and reduced device size by eliminating the need for additional chip area beyond the active region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If gate contact plugs are formed outside the active region over insulation regions, then manufacturing process is simplified, but chip area utilization is inefficient and routing flexibility is limited
Solution Approach 1:
The gate contact plug is repositioned from a lateral placement (outside the active region) to a vertical placement (directly over the active region). This dimensional change in layout allows the contact plug to occupy space above the active region rather than requiring additional lateral chip area, thereby improving area utilization while maintaining manufacturing simplicity
Solution Approach 2:
The gate contact plug serves dual purposes: it provides electrical connection to the gate electrode while simultaneously utilizing the vertical space above the active region. This multi-functional approach allows the same structure to fulfill both its electrical connection function and area optimization function
2Ease of manufacture
If gate contact plugs are formed outside the active region, then manufacturing process is simplified, but routing flexibility of overlying metal lines is limited
Solution Approach 1:
By moving the gate contact plug to a vertical position directly over the active region, the layout provides additional spatial freedom for routing metal lines in the planar dimension. This dimensional repositioning enables more flexible routing paths for overlying metal interconnects without complicating the manufacturing process
3Area of stationary object
If gate contact plugs are formed directly over the active region, then chip area utilization is optimized and routing flexibility is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The gate contact plug is formed concurrently with or integrated into the gate electrode formation process, rather than as a separate subsequent step. This preliminary action ensures proper alignment and reduces the need for high-precision separate placement operations, thereby optimizing area utilization without excessively increasing manufacturing precision requirements
Data Source
AI summary
A device includes a semiconductor substrate including an active region, a gate electrode directly over the active region, and a gate contact plug over and electrically coupled to the gate electrode. The gate contact plug includes at least a portion directly over, and vertically overlapping, the active region.