Output Transistor Gate Control for Rounded Signal Edges
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Solution Overview
Problem
Existing circuit devices fail to effectively round signal waveforms, leading to noise radiation in signal transmission due to abrupt changes in signal edges, which existing pulse forming configurations do not adequately address.
Innovation Solution
A circuit device with a gate voltage control circuit that changes the gate voltage at specific temporal voltage change rates to round the corners of output signal transitions, using a semiconductor device with an output transistor and diodes to control the waveform, ensuring gentle slope changes during signal rising and falling edges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the gate voltage changes rapidly to improve signal transmission speed, then the signal edge becomes abrupt, but noise radiation increases due to the abrupt changes in signal edges
Solution Approach 1:
The gate voltage control circuit dynamically adjusts the voltage change rate in three distinct phases: initially high to quickly establish signal level, then reduced to round the corner and minimize noise, and finally increased again to complete the transition. This dynamic adjustment of temporal characteristics resolves the contradiction between speed and noise radiation.
Solution Approach 2:
The patent changes the temporal voltage change rate parameter of the gate voltage across different time intervals. By varying this parameter (first temporal voltage change rate, second temporal voltage change rate, third temporal voltage change rate), the circuit achieves both fast signal transmission and reduced noise radiation during critical transition phases.
2Ease of manufacture
If the gate voltage changes at a constant rate to simplify control, then the circuit design is easier, but the signal waveform corners remain sharp causing noise radiation
Solution Approach 1:
The gate voltage control circuit segments the voltage change process into three distinct temporal phases with different voltage change rates. This segmentation allows each phase to be controlled independently, achieving waveform rounding without excessive complexity by using multiple simple control stages rather than one complex continuous control.
3Object-generated harmful factors
If the gate voltage is controlled with multiple temporal voltage change rates to round the waveform, then noise radiation is reduced, but the control circuit complexity increases
Solution Approach 1:
The gate voltage control circuit acts as an intermediary between the input signal and the output transistor, shaping the voltage waveform through controlled intermediate states. This intermediary function rounds the waveform corners and reduces noise radiation while maintaining manageable circuit complexity through systematic voltage control.
4Reliability
If the gate voltage transitions quickly to maintain signal integrity, then the signal edge is sharp, but the rising and falling edges produce noise due to abrupt changes
Solution Approach 1:
The control circuit dynamically adjusts the gate voltage transition characteristics, using high voltage change rates initially and finally for quick establishment and completion of signal levels, while using a reduced voltage change rate during the critical corner rounding phase. This dynamic control maintains signal integrity while minimizing noise from edge transitions.
Data Source
AI summary
A circuit device includes an output terminal, an output transistor, and a gate voltage control circuit. The output transistor is provided between a first power supply node and the output terminal. The gate voltage control circuit changes a gate voltage of the output transistor at a first temporal voltage change rate after an input signal changes from a first logic level to a second logic level, changes the gate voltage at a second temporal voltage change rate smaller than the first temporal voltage change rate after the gate voltage reaches a first determination voltage, and changes the gate voltage at a third temporal voltage change rate greater than the second temporal voltage change rate after the gate voltage reaches a second determination voltage.