Gate-Controlled Charge Modulated CMOS Image Sensor
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Solution Overview
Problem
Traditional digital image sensors, such as CMOS sensors and charge modulation devices, suffer from high dark current, low quantum efficiency, and weak channel modulation, especially when detecting short-wave infrared light, which limits their performance and requires costly cooling.
Innovation Solution
A semiconductor optical sensor device with a gate-controlled charge modulated structure, featuring a first semiconductor region doped with a first type of dopant and a second semiconductor region doped with a second type, positioned above the first, with a gate insulation layer and a gate, allowing enhanced charge modulation and high quantum efficiency for short-wave infrared light detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional photodiodes are used in CMOS sensors, then the device can detect light, but dark current increases causing increased shot noise
Solution Approach 1:
The patent changes the doping parameters of semiconductor regions, specifically creating a first semiconductor region with first-type dopant and a second semiconductor region with second-type dopant at different locations. This parameter change in doping type and concentration reduces dark current while maintaining light detection capability, directly resolving the contradiction between measurement precision and dark current generation.
2Object-generated harmful factors
If charge modulation devices are used to reduce dark current, then dark current decreases, but the change in on/off signals becomes small and channel modulation becomes weak
Solution Approach 1:
The patent applies local quality by creating distinct semiconductor regions with different doping types at specific locations. The first semiconductor region with first-type dopant and the second semiconductor region with second-type dopant are positioned at different locations to locally optimize both dark current reduction and channel modulation strength, resolving the contradiction between these two parameters.
3Measurement precision
If conventional structures are used for short-wave infrared detection, then quantum efficiency is limited, but the device complexity remains low
Solution Approach 1:
The patent segments the semiconductor structure into distinct regions: a first semiconductor region with first-type dopant and a second semiconductor region with second-type dopant positioned at different locations. This segmentation allows each region to be optimized for specific functions, improving quantum efficiency for short-wave infrared detection while maintaining manageable device complexity through modular regional design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces noise, increases quantum efficiency, and improves the on/off signal ratio for detecting short-wave infrared light, eliminating the need for cooling and enhancing sensor performance.
Implementation Method 1
gate-controlled charge modulated device
Implementation Method 2
sensing short-wave infrared light
Implementation Method 3
utilize photodiodes
Implementation Method 4
first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type
Data Source
AI summary
A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.