Gate-Coupled EPROM Cell for Printhead Identification

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Solution Overview

Problem

Inkjet printhead circuits face challenges with existing identification methods, such as fuses being unreliable and prone to damage, and EPROM chips requiring additional layers and increased complexity, which complicates the provision of identification information necessary for proper printer operation without increasing interconnections or die size.

Innovation Solution

A gate-coupled EPROM structure is integrated into the printhead circuitry, utilizing existing layers to provide EPROM functionality without adding process steps or cost, allowing for efficient storage and retrieval of identification information using a compact layout that replaces fuses.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If fuses are used for identification bits, then the circuit can be programmed, but the fuses are unreliable and can damage the inkjet orifice layer

Engineering Contradiction:
ImproveprogrammabilityVSAvoidfuse reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent extracts the problematic fuse element from the circuit and replaces it with an EPROM-based identification bit that achieves the same programming function without the reliability issues of fuses. The EPROM cell structure eliminates the need for physical fuse burning while maintaining programmability.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the programming mechanism from physical destruction (fuse burning) to electrical parameter modification (threshold voltage change in EPROM). By using voltage thresholds to represent binary states, the system achieves programmability without the harmful effects of fuse burning.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If EPROM chips are used for identification, then reliability improves compared to fuses, but additional layers and complexity are required

Engineering Contradiction:
Improveidentification storage reliabilityVSAvoidchip layer complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the EPROM identification cell with the existing printhead circuit layers, integrating the floating gate and control gate structures into the same die without requiring separate EPROM chips or additional process layers. This combining approach maintains reliability while reducing complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent makes the printhead die structure multi-functional by enabling it to serve both as the inkjet firing circuit and as an EPROM storage device. The same physical layers are used for both identification storage and circuit operation, eliminating the need for separate dedicated EPROM layers.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Loss of information

If more identification information is provided, then printer operation can be optimized, but the die size or interconnections must increase

Engineering Contradiction:
Improveidentification information completenessVSAvoiddie size
Core Design Contradiction:
Loss of informationVSArea of stationary object

Solution Approach 1:

The patent utilizes the vertical dimension by implementing multiple identification bits stacked in different layers of the die structure. Rather than expanding horizontally, the system stores multiple bits of identification information by using the third dimension (depth/layers) of the semiconductor structure.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent segments the identification information into multiple individual bits, each stored in a separate EPROM cell structure. This segmentation allows for scalable information storage where additional identification data can be added by incorporating more bits without requiring a proportional increase in overall die area.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances the reliability and efficiency of identification information storage in inkjet printheads, reducing the risk of damage and complexity, while maintaining a compact design that supports accurate printer operation and optimization.

Implementation Method 1

a floating gate and a control gate. The floating gate is separated from the control gate by a thin oxide layer that acts as a dielectric. A blank EPROM has all of the gates fully open, giving each cell a value of 1. That is, the floating gate initially has no charge, which causes the threshold voltage to be low.

Methodology Applied
Scientific EffectElectron trapping: Electron Avalanche

Implementation Method 2

To change the value of the bit to 0, a programming voltage (e.g. 10 to 16 volts) is applied to the control gate and drain. This programming voltage draws excited electrons to the floating gate, thereby increasing the threshold voltage. The excited electrons are pushed through and trapped on the other side of the thin oxide layer, giving it a negative charge.

Methodology Applied
Scientific EffectThreshold voltage modulation:

Implementation Method 3

The floating gate is separated from the control gate by a thin oxide layer that acts as a dielectric.

Methodology Applied
Scientific EffectDielectric insulation: Dielectric

Data Source

PatentEP1994553B1Gate-coupled eprom cell for printhead
Publication Date: 2021.10.06 HEWLETT PACKARD DEVELOPMENT COMPANY LP
  • EP1994553B1 patent drawingFigure 1~2
  • EP1994553B1 patent drawingFigure 3
  • EP1994553B1 patent drawingFigure 4~5

AI summary

An EPROM cell (270) in a printhead control circuit for an inkjet printer, having exactly one polysilicon layer (256) and a conductive layer (260) disposed above the polysilicon layer, includes a control transistor (272) and an EPROM transistor (274). The control and EPROM transistors each have floating gates (280, 282) comprising a portion of the polysilicon layer (256), and an electrical interconnection, comprising a portion of the conductive layer (260), interconnects the floating gate (280) of the control transistor (272) and the floating gate (282) of the EPROM transistor (274).