Gate Cut Structure With Segmented Gates for FET Channel Control
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Solution Overview
Problem
Current semiconductor technologies face challenges in further miniaturizing structural features while maintaining effective control over the channel in FETs, particularly as they approach atomic level scaling.
Innovation Solution
The proposed solution involves forming a gate cut structure in semiconductor devices, where a source/drain contact structure with a first metal layer and a second metal layer, having a different material composition, is disposed around the gate cut portion. This configuration allows for the formation of gate cut portions through the gate structure, enabling efficient contact formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If FET size is reduced for miniaturization, then chip density and performance increase, but control over the channel becomes difficult to maintain
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate and second gate) that can be independently controlled. This segmentation allows each gate to effectively control its respective channel region, maintaining control effectiveness even as the overall device is miniaturized. The gate cut portion enables this segmentation by creating distinct gate regions.
Solution Approach 2:
The invention introduces a vertical dimension to gate control by forming gates that extend into the channel region. The gate structure is positioned to provide three-dimensional control over the channel, moving beyond planar control to volumetric control, which enhances channel control in miniaturized devices.
2Volume of moving object
If gate structure is made smaller to reduce FET size, then miniaturization is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The gate cut portion is formed as a preliminary structure before final gate electrode deposition. This preliminary action defines the gate regions and simplifies subsequent manufacturing steps, reducing the precision requirements for later processes. The cut structure serves as a template for forming the final gate electrodes.
Solution Approach 2:
The gate cut portion acts as an intermediary structure between the channel region and the gate electrodes. This intermediary structure simplifies the manufacturing process by providing a pre-defined framework that guides electrode deposition and positioning, thereby reducing overall manufacturing precision requirements.
3Productivity
If source/drain contact structure is formed around gate cut portion, then contact efficiency improves, but device complexity increases
Solution Approach 1:
The source/drain contact structure is merged with the gate cut portion to form an integrated contact system. The contact structure wraps around the gate cut portion, combining contact formation with gate definition into a single structural feature. This merging improves contact efficiency while avoiding the need for separate, complex contact and gate formation processes.
Data Source
AI summary
A semiconductor device includes at least one transistor including a gate structure and a source/drain region, and a source/drain contact structure disposed on the source/drain region. The source/drain contact structure includes a first metal layer and second metal layer disposed on the first metal layer, wherein the second metal layer includes a different material than the first metal layer and is disposed on an uppermost surface of the first metal layer. A gate cut portion is disposed through a part of the gate structure, wherein the source/drain contact structure is disposed on a side of the gate cut portion.