FinFET Gate Cut Isolation Layout for Reliable High Integration
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Solution Overview
Problem
The increasing integration and miniaturization of integrated circuit devices pose challenges in maintaining the performance and reliability of nanosheet field-effect transistors, particularly due to process defects during fabrication.
Innovation Solution
The integrated circuit device incorporates a gate cut insulating pattern between gate lines in different device areas, with local isolation portions and a dummy active fin, which helps in reducing the width of the gate cut insulating pattern and minimizing process defects, thereby enhancing the performance and reliability of transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration is increased and device size is decreased, then more transistors can be placed on the substrate, but process defects during fabrication increase and reliability deteriorates
Solution Approach 1:
The gate line is divided into multiple segments by introducing gate cut insulating patterns, creating first and second gate lines that are separated in the second horizontal direction. This segmentation allows each gate line segment to be independently formed and controlled, reducing process defects while maintaining high integration density.
Solution Approach 2:
Device isolation films are selectively positioned at specific locations between fin-type active regions, creating local isolation portions rather than continuous isolation. This local quality approach provides targeted isolation where needed while maintaining transistor performance in other areas, enabling higher integration without compromising reliability.
2Area of stationary object
If the gate cut insulating pattern width is reduced to maintain high integration, then more devices fit in the layout area, but manufacturing precision becomes more difficult to achieve
Solution Approach 1:
A dummy active fin is introduced as an intermediary structure between the first and second fin-type active regions. The gate cut insulating pattern is formed on the dummy active fin, which serves as a convenient platform for precise pattern formation. This intermediary approach enables accurate positioning and formation of the gate cut insulating pattern while maintaining compact layout.
Solution Approach 2:
The dummy active fin is formed in advance before the gate cut insulating pattern is created. This preliminary action provides a pre-prepared structure that facilitates the subsequent formation of the gate cut insulating pattern with high precision, as the dummy fin serves as a ready-made template and support structure.
3Productivity
If device isolation films are placed close to each other to increase integration density, then more transistors can be integrated, but process defects increase and fabrication becomes more difficult
Solution Approach 1:
The device isolation film structure is segmented into multiple discrete isolation portions positioned at different locations between fin-type active regions. This segmentation allows each isolation portion to be independently formed and controlled, simplifying the fabrication process while achieving high integration density through optimized spatial arrangement.
Data Source
AI summary
An integrated circuit device includes a first fin-type active region and a second fin-type active region, a device isolation film adjacent to each of the first and second fin-type active regions, a first gate line on the first fin-type active region, a second gate line on the second fin-type active region, and a gate cut insulating pattern separating the first and second gate lines, wherein the device isolation film includes a first local isolation portion and a second local isolation portion, which are separating the first fin-type active region from the second fin-type active region to be apart from each other with the gate cut insulating pattern therebetween.