Gate Cut Region for Semiconductor Device Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in improving electrical characteristics and integration density, particularly in the design and manufacturing of field effect transistors, which are essential for high-reliability and high-speed applications.
Innovation Solution
The semiconductor device design includes a substrate with PMOSFET and NMOSFET regions, specific gate electrode configurations, and connection structures that intersect and overlap to enhance electrical connectivity and integration density, along with device isolation layers and active portions to optimize transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor structures are used, then manufacturing simplicity is maintained, but electrical characteristics and integration density cannot be improved
Solution Approach 1:
The patent introduces a gate cut region that extends in the second direction (vertical dimension in plan view) to connect gate electrodes between PMOSFET and NMOSFET regions. This dimensional extension allows electrical connection without adding horizontal routing complexity, improving electrical characteristics while maintaining relatively simple structure.
Solution Approach 2:
The gate cut region serves multiple functions simultaneously: it connects gate electrodes electrically, provides a pathway for contact structures, and enables signal sharing between complementary transistors. This merging of functions improves electrical characteristics without proportionally increasing structural complexity.
2Reliability
If more gate electrodes and connection structures are added, then integration density improves, but manufacturing complexity increases
Solution Approach 1:
The gate electrode system is segmented into multiple gates (first, second, third, fourth gate electrodes) that can be independently controlled. The gate cut region further segments the connection path, allowing selective electrical connection. This segmentation enables higher integration density by allowing independent optimization of each transistor while sharing common control signals.
Solution Approach 2:
The gate cut region serves as a universal connection structure that can connect different gate electrodes (first to fourth) and enable multiple signal distribution paths. This multi-functional design increases integration density without requiring separate dedicated connection structures for each function, thereby controlling manufacturing complexity.
3Reliability
If gate electrodes are aligned and connected across PMOSFET and NMOSFET regions, then electrical characteristics improve, but device layout complexity increases
Solution Approach 1:
The gate electrode configuration uses asymmetric naming and positioning (first, second gates on one side; third, fourth gates on the other) to clearly distinguish PMOSFET and NMOSFET regions while maintaining symmetric electrical functionality. The gate cut region creates an asymmetric connection path that adapts to the complementary nature of the transistor pairs, improving electrical characteristics with manageable layout complexity.
Solution Approach 2:
Instead of complicating the horizontal layout to connect gates across regions, the invention uses the vertical dimension (second direction in plan view) to extend the gate cut region. This allows gate electrodes to be aligned and connected without creating complex horizontal routing, maintaining cleaner device layout while improving electrical characteristics.
Data Source
AI summary
According to example embodiments, a semiconductor device and a method for manufacturing the same are provided, the semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region, a first gate electrode and a second gate electrode on the PMOSFET region, a third gate electrode and a fourth gate electrode on the NMOSFET region, and a first contact and a second contact connected to the first gate electrode and the fourth gate electrode, respectively. The first to fourth gate cut electrodes define a gate cut region that passes between the first and third gate electrodes and between the second and fourth gate electrodes. A portion of each of the first and second contacts overlaps with the gate cut region when viewed from a plan view.