Gate Cut Layout for Reliable Semiconductor Gate Separation
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively separating gate electrodes while maintaining the reliability of the field insulation layer, leading to potential reliability issues in the semiconductor device.
Innovation Solution
A semiconductor device and method where a sacrificial layer with a lower surface formed below the upper surface of the field insulation layer are used to create a gate cut, allowing for effective separation of gate electrodes and improving the reliability of the device by forming a gate electrode on a dam with a lower surface below the field insulation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the gate cut is formed deeply to separate gate electrodes, then separation effectiveness is improved, but the manufacturing complexity increases
Solution Approach 1:
The gate cut structure employs asymmetry by extending the first gate cut portion in the first direction and the second gate cut portion in the second direction with different orientations. This asymmetric design achieves effective gate electrode separation through strategic directional extension rather than uniform deep cutting, thereby reducing manufacturing complexity while maintaining separation effectiveness.
Solution Approach 2:
The gate cut structure transitions from a single-direction cut to a multi-directional cut by extending portions in both the first direction and the second direction. This dimensional change enables effective gate electrode separation through a more distributed cut pattern, reducing the need for excessively deep single-direction cuts and thereby simplifying manufacturing.
Data Source
AI summary
A semiconductor device including a substrate, first and second active patterns, each including first and second side walls, a field insulation layer surrounding side walls of each of the first and second active patterns, a first dam between the first and second active patterns and having a lower surface lower than an upper surface of the field insulation layer, a second dam spaced apart from the first side wall of the first active pattern and having a lower surface lower than the upper surface of the field insulation layer, a first gate electrode on the first dam between the first and second active patterns, a second gate electrode spaced apart from the first gate electrode, and a first gate cut spaced apart from each of the first side walls of each of the first and second active patterns and intersecting each of the first and second gate electrodes.