Gate Cut Layout in Multi-Gate Transistors for Short-Channel Control
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Solution Overview
Problem
Current semiconductor devices face challenges in enhancing operation performance, particularly in controlling current and inhibiting short channel effects, due to limitations in gate electrode design and fabrication methods for multi-gate transistors.
Innovation Solution
The semiconductor device incorporates a gate cut region with varying dimensional features, including cut regions between active patterns and gate electrodes, to optimize gate electrode separation and enhance operational performance by adjusting threshold voltage and drain current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a multi-gate transistor structure is used to enhance current control capability, then current control capability is improved, but device complexity increases
Solution Approach 1:
The gate electrode is segmented into multiple gates (first gate electrode and second gate electrode) that are spatially separated by cut regions. This segmentation enables independent control of different active patterns while maintaining the multi-gate structure's current control benefits, thus improving current control capability without excessive complexity increase
Solution Approach 2:
Different regions of the device have different gate configurations - some active patterns have multiple gates while others have single gates. This local differentiation allows optimization of current control in specific regions where needed, improving overall current control capability while avoiding unnecessary complexity in regions where simpler structures suffice
2Reliability
If gate cut regions are introduced to separate gate electrodes, then short channel effect inhibition is improved, but manufacturing precision requirements increase
Solution Approach 1:
The cut regions are formed as part of the gate electrode structure fabrication process, specifically during the etching step that defines the gate electrode patterns. By integrating the cut region formation with the existing gate fabrication流程, the manufacturing precision requirements are managed within the established process capabilities rather than introducing new precision challenges
3Reliability
If varying dimensional features are used in cut regions, then operational performance enhancement is improved, but device complexity increases
Solution Approach 1:
Different cut regions have different dimensional features (first cut region with dimensions L1×W1 and second cut region with dimensions L2×W2) to optimize the operational performance of specific transistor regions. This local optimization improves overall device operational performance while maintaining a relatively simple overall structure by only varying dimensions rather than adding complex components
Data Source
AI summary
There is provided a semiconductor device having enhanced operation performance by utilizing a cut region where a gate cut is implemented. There is provided a semiconductor device comprising a first active pattern, a second active pattern, a third active pattern, and a fourth active pattern, all of which extend in parallel in a first direction, and are arranged along a second direction intersecting the first direction; a first gate electrode extended in the second direction on the first to fourth active patterns a first cut region extended in the first direction between the first active pattern and the second active pattern to cut the first gate electrode and a second cut region extended in the first direction between the third active pattern and the fourth active pattern to cut the first gate electrode, wherein one or more first dimensional features related to the first cut region is different from one or more second dimensional features related to the second cut region.