Gate Cutting Groove Formation for Reliable Separated Gate Structures
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in effectively cutting continuous linear gate structures to form separated gate structures while minimizing crosstalk and improving power tolerance and signal transmission efficiency, which is hindered by existing etching processes that cause deformation and reliability issues.
Innovation Solution
A method involving the use of a patterned dielectric layer as a mask to selectively remove gate structures, followed by a planarization process to form gate cutting grooves, with additional dielectric layers to support and stabilize the structure, ensuring precise separation and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If continuous linear gate structures are cut to form separated gate structures, then crosstalk effects are reduced and power tolerance is improved, but the etching process causes deformation and reliability issues
Solution Approach 1:
The patent applies preliminary action by forming a mandrel structure and patterned dielectric layer before the gate cutting process. The mandrel is formed with precise dimensions and positioning, and the dielectric layer is patterned to define the exact cutting locations. This preliminary structuring provides a stable framework that guides subsequent etching, preventing deformation and ensuring manufacturing precision while achieving reliable gate separation
Solution Approach 2:
The patent uses an intermediary approach by introducing a mandrel structure and patterned dielectric layer as intermediate elements. The mandrel acts as a temporary support structure during the cutting process, and the patterned dielectric layer serves as a masking intermediary that protects specific regions during etching. These intermediaries enable precise gate cutting without causing deformation, thereby improving both manufacturing precision and device reliability
2Ease of manufacture
If a patterned photoresist layer is used to expose gate structure for cutting, then gate separation is achieved, but deformation and reliability issues occur during etching
Solution Approach 1:
The patent employs disposable short-living objects by using a mandrel structure and patterned dielectric layer that are intentionally designed to be temporary. The mandrel is formed, used as a support during the cutting process, and then removed along with the photoresist. This disposable approach simplifies the manufacturing process by providing easy-to-remove temporary structures that enable precise gate cutting without compromising final device reliability
Solution Approach 2:
The patent applies preliminary action by forming the mandrel and patterned dielectric layer before the actual gate cutting. This preliminary structuring establishes a stable framework that guides the etching process, ensuring precise gate separation while preventing deformation. The preliminary structures are designed to be removed after serving their protective and guiding functions, leaving the final device structure intact and reliable
3Reliability
If multiple dielectric layers are used to support gate structure, then deformation is prevented and reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the dielectric support structure into distinct functional layers: a first dielectric layer providing baseline support, a patterned second dielectric layer providing localized support at critical cutting regions, and optionally a third dielectric layer for additional protection. Each layer serves a specific function in preventing deformation during gate cutting. This segmented approach improves reliability by providing targeted support where needed while keeping the overall structure manageable and not excessively complex
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of semiconductor devices by preventing deformation of dielectric layers and improving the smoothness of the grinding surface, thereby maintaining device performance and reducing adverse effects on subsequent processes.
Implementation Method 1
each of the second dielectric layer, the third dielectric layer, and the fourth dielectric layer includes a high-density plasma dielectric layer
Implementation Method 2
using the third dielectric layer as a mask to selectively remove the gate structure exposed by the opening to form a gate cutting groove
Data Source
AI summary
This application provides a semiconductor device and a method for manufacturing the same. The method includes: providing a semiconductor substrate, on which gate structures and a first dielectric layer are formed; replacing a portion of the first dielectric layer away from the semiconductor substrate with a second dielectric layer; forming a patterned third dielectric layer on the gate structure and the second dielectric layer, wherein the third dielectric layer has an opening exposing a surface of a predetermined gate removal area of the gate structure; using the third dielectric layer as a mask to selectively remove the gate structure exposed by the opening to form a gate cutting groove; forming a fourth dielectric layer in the gate cutting groove; and removing the third dielectric layer and the fourth dielectric layer that are higher than the gate structure through a planarization process to form a partially cut gate structure.