Gate Cutting Pattern Layout for Short-Resistant Semiconductor Gates
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Solution Overview
Problem
The increasing demand for semiconductor devices with high integration, reliability, and speed poses challenges in achieving efficient fabrication methods that maintain device reliability and prevent short-circuit defects.
Innovation Solution
The semiconductor device design incorporates a substrate with distinct active regions, gate electrodes, and spacers, along with a gate cutting pattern and capping pattern, which are strategically structured to prevent etching material intrusion and ensure self-aligned contacts, thereby enhancing reliability and preventing short-circuit defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional fabrication methods are used for high integration, then device density increases, but short-circuit defects and reliability issues worsen
Solution Approach 1:
The gate cutting pattern is formed in advance before the contact hole etching process. This preliminary action defines the etch stopping position, preventing etching material from intruding into adjacent gate electrodes and causing short-circuit defects, thereby maintaining reliability during high integration fabrication
Solution Approach 2:
The gate cutting pattern acts as an intermediary structure between adjacent gate electrodes. It serves as a physical barrier and etch stop layer, mediating the interaction between etching processes and gate electrodes to prevent harmful material intrusion while allowing continued device integration
2Manufacturing precision
If etching processes are used for contact formation, then contact precision improves, but etching material intrusion causes short-circuit defects
Solution Approach 1:
The gate cutting pattern is strategically positioned to counteract the potential harmful effect of etching material intrusion before it can occur. It serves as a pre-established barrier that prevents etching materials from reaching and intruding into adjacent gate electrodes during the contact formation process
Solution Approach 2:
The gate cutting pattern functions as an intermediary barrier between the etching process and the gate electrodes. It allows the etching process to proceed with high precision for contact formation while simultaneously blocking etching materials from intruding into sensitive areas, thus resolving the contradiction between precision and harmful effects
Data Source
AI summary
A semiconductor device includes a substrate having first and second active regions. A first active pattern is on the first active region and includes first source/drain patterns and a first channel pattern therebetween. A second active pattern is on the second active region and includes second source/drain patterns and a second channel pattern therebetween. A gate electrode includes a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern. A gate cutting pattern is between the first and second gate electrodes and separates the first and second gate electrodes from each other. A pair of gate spacers is on opposite sidewalls of the first gate electrode extending along opposite sidewalls of the gate cutting pattern towards the second gate electrode. The gate cutting pattern includes first to third parts having maximum widths that increase from the first to the third part.