Gate Dielectric Fluorination for Uniform Nanostructure Channels
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Solution Overview
Problem
The semiconductor industry faces challenges in processing and manufacturing integrated circuits (ICs) due to the complexity and scaling down of ICs, which affects production efficiency and increases costs.
Innovation Solution
A method for manufacturing semiconductor devices involving the formation of nanostructure channels using alternating semiconductor layers with different etch selectivity and oxidation rates, followed by a fluorination process to uniformly incorporate fluorine into the gate dielectric layer, reducing threshold voltage variability and metal boundary effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional manufacturing processes are used for scaled-down ICs, then production complexity increases, but production efficiency decreases and costs increase
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition and concentration of etchants to achieve selective removal of sacrificial semiconductor layers. By adjusting etchant parameters (composition, concentration, temperature), the process enables precise control over layer removal while preserving other structures, thereby simplifying manufacturing complexity while maintaining high production efficiency for scaled-down ICs
2Quantity of substance
If geometry size is decreased to increase functional density, then more devices fit per chip area, but manufacturing complexity increases
Solution Approach 1:
The patent employs segmentation by dividing the semiconductor structure into multiple alternating layers of different semiconductor materials with distinct etch selectivities. This layered segmentation allows for selective removal of specific sacrificial layers while preserving others, enabling complex 3D device architectures at scaled dimensions without proportionally increasing manufacturing complexity. The segmented structure facilitates precise control over device formation at high functional density
3Reliability
If threshold voltage variability is reduced to improve IC performance, then device performance improves, but additional processing steps are required
Solution Approach 1:
The patent introduces an intermediary fluorine-containing layer that serves as a mediator to uniformly distribute fluorine atoms throughout the gate dielectric layer. This intermediary layer enables controlled fluorine incorporation that reduces threshold voltage variability and improves device performance. The fluorine-containing layer acts as a buffer that facilitates uniform dopant distribution while maintaining processing feasibility through integrated deposition and annealing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances manufacturing efficiency by reducing threshold voltage standard deviation and alleviating metal boundary effects, leading to improved IC performance and cost-effectiveness.
Implementation Method 1
performing an annealing process on the fluorine-containing layer
Implementation Method 2
forming a plurality of fin structures and removing sacrificial semiconductor layers between the fin structures
Implementation Method 3
depositing a gate dielectric layer on the fin structures
Data Source
AI summary
Embodiments of the present disclosure provide a semiconductor device structure and methods of forming the same. The method includes forming a fin structure from a substrate, and the fin structure includes a plurality of semiconductor layers. The method further includes depositing a gate dielectric layer around a portion of each semiconductor layer of the plurality of semiconductor layers, depositing an adhesion layer on the gate dielectric layer, and the adhesion layer surrounds the portion of each semiconductor layer of the plurality of semiconductor layers. The method further includes depositing a fluorine-containing layer on the adhesion layer, and the fluorine-containing layer surrounds the portion of each semiconductor layer of the plurality of semiconductor layers. The method further includes performing an annealing process on the fluorine-containing layer, removing the fluorine-containing layer and the adhesion layer, and forming a gate electrode layer on the gate dielectric layer.