Gate Dielectric Fluorine Gradient for Reliable GAA Transistors
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Solution Overview
Problem
The semiconductor industry faces challenges in processing and manufacturing complex integrated circuits (ICs) due to the scaling down process, which increases complexity and requires improved manufacturing methods.
Innovation Solution
A method for manufacturing semiconductor devices involves forming nanostructure channels using alternating semiconductor layers with different etch selectivity and oxidation rates, followed by a series of etching and deposition processes to create gate-all-around transistors, and incorporating fluorination and dipole processes to enhance the gate dielectric layers for improved performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If geometry size is decreased to increase functional density, then production efficiency and cost are improved, but processing complexity increases
Solution Approach 1:
The patent segments the gate structure into multiple components including gate dielectric layers, gate electrode layers, and gate spacer layers formed through sequential deposition and etching processes. This segmentation allows each layer to be optimized independently for specific functions while maintaining overall device performance at scaled dimensions
Solution Approach 2:
The patent implements a gate-all-around structure where gate dielectric layers and gate electrode layers are nested within gate spacer layers, which are in turn nested within the semiconductor body structure. This nested configuration enables three-dimensional control of the channel while managing processing complexity through systematic layer integration
2Manufacturing precision
If alternating semiconductor layers with different etch selectivity are used to form nanostructure channels, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent employs alternating semiconductor layers with different etch selectivity and oxidation rates at specific locations within the structure. This local differentiation enables selective removal and modification of particular layers during processing, achieving precise nanostructure channel formation without requiring complex global structure modifications
Solution Approach 2:
The patent utilizes changes in material parameters such as etch selectivity and oxidation rate across different semiconductor layers to enable selective processing. By incorporating layers with varying compositional parameters, the manufacturing process can precisely control channel formation through selective etching and oxidation steps
3Reliability
If fluorination and dipole processes are incorporated to enhance gate dielectric layers, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent incorporates fluorination and dipole processes as preliminary treatments to the gate dielectric layers before final device assembly. These preliminary actions pre-condition the dielectric layers with improved electrical properties, reducing the need for subsequent corrective processes and simplifying overall manufacturing
Solution Approach 2:
The patent applies fluorination and dipole processes that modify the physical and chemical parameters of the gate dielectric layers, such as dielectric constant and charge characteristics. These parameter changes enhance device reliability by improving electrical performance and stability without requiring fundamental structural redesigns
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the manufacturing process by reducing the k-value of dielectric spacers, passivating oxygen vacancies, and adjusting threshold voltages, resulting in improved performance and reliability of the semiconductor devices.
Implementation Method 1
performing a fluorination process to incorporate fluorine into the first gate dielectric layer
Implementation Method 2
passivating oxygen vacancies
Implementation Method 3
followed by a series of etching and deposition processes to create gate-all-around transistors
Implementation Method 4
followed by a series of etching and deposition processes to create gate-all-around transistors
Data Source
AI summary
A semiconductor device structure and methods of forming the same are described. The structure includes a first gate dielectric layer disposed over a substrate, the first gate dielectric layer includes an inner surface and an outer surface opposite the inner surface, and the first gate dielectric layer includes a fluorine concentration that decreases from the inner surface towards the outer surface. The structure further includes a second gate dielectric layer disposed on the first gate dielectric layer, the first and second gate dielectric layers have a combined thickness, and a thickness of the first gate dielectric layer ranges from about 30 percent to about 80 percent of the combined thickness. The structure further includes a gate electrode layer disposed over the second gate dielectric layer and a spacer disposed adjacent the first gate dielectric layer.