Gate Dielectric Segmentation in Semiconductor Isolation Structures
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high electrical and reliability characteristics, particularly in meeting the demands for fast speed and low power consumption while maintaining high integration density and complexity.
Innovation Solution
The semiconductor device incorporates a substrate with active patterns, gate electrodes, a separation structure, first and second gate dielectric patterns, and a gate capping pattern, with the separation structure extending vertically to penetrate the active patterns and the gate dielectric patterns interposed between the separation structure and the gate spacers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the separation structure penetrates the active patterns and gate dielectric patterns to enhance electrical characteristics, then the reliability and performance improve, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The gate dielectric layer is segmented into multiple distinct patterns: a first gate dielectric pattern on the gate electrode, a second gate dielectric pattern on the separation structure, and a third gate dielectric pattern in the trench. This segmentation allows each dielectric region to be optimized independently for its specific function, improving overall electrical characteristics while managing complexity through modular design
Solution Approach 2:
The separation structure extends vertically through multiple layers (active pattern, gate electrode, interlayer insulating layer) to a higher level than the gate capping pattern. This vertical dimensionality change enables the separation structure to effectively isolate adjacent devices while accommodating the multi-pattern gate dielectric configuration, thereby enhancing reliability without excessive horizontal complexity
2Reliability
If multiple gate dielectric patterns are introduced to improve electrical characteristics, then the performance enhances, but the manufacturing precision requirements increase
Solution Approach 1:
The first gate dielectric pattern is formed on the gate electrode before the gate electrode is removed. This preliminary action ensures proper electrical characteristics are established early in the fabrication process, and subsequent dielectric patterns are added in sequence, allowing each layer to be optimized without requiring simultaneous precision of all layers
Solution Approach 2:
Different gate dielectric patterns are applied to different locations: the first pattern on the gate electrode side, the second pattern on the separation structure side, and the third pattern in the trench. Each location receives a dielectric pattern optimized for its specific electrical requirements, improving overall device performance while allowing manufacturing tolerances to be managed locally rather than globally
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.