Gate Dielectric Nitrogen Stabilization for Leakage Reduction
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Solution Overview
Problem
The miniaturization of semiconductor components leads to increased gate dielectric layer leakage and reduced reliability due to nitrogen diffusion during conventional rapid thermal processes, which degrades the capacitive effective thickness (CET) of gate structures.
Innovation Solution
A method involving forming a dielectric layer on a semiconductor substrate, followed by a nitrogen treating process to create a nitride layer, and a short-term thermal treating process at 1150-1400°C for 400-800 milliseconds to stabilize nitrogen and prevent diffusion, thereby forming a high-quality gate dielectric layer that reduces CET and leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional rapid thermal process is performed at 400-1150°C for 20 seconds to stabilize nitrogen, then nitrogen is stabilized in the gate dielectric layer, but nitrogen diffuses into the gate dielectric layer during long-term rapid thermal processes, degrading CET and reducing reliability
Solution Approach 1:
The patent changes the thermal process parameters by performing rapid thermal annealing at a higher temperature (1150-1400°C) for a shorter duration (400-800 milliseconds) compared to conventional processes. This parameter change stabilizes nitrogen more effectively while preventing diffusion during subsequent long-term thermal processes, thus resolving the contradiction between reliability improvement and CET degradation
Solution Approach 2:
The patent performs a preliminary nitrogen treating process to form a nitride layer on the dielectric layer before the main thermal process. This preliminary action prepares the gate dielectric layer to better retain nitrogen during subsequent thermal processes, preventing nitrogen diffusion and CET degradation while ensuring reliable device operation
2Object-generated harmful factors
If gate dielectric layer thickness is increased to reduce leakage, then leakage is reduced, but miniaturization requirements cannot be met
Solution Approach 1:
The patent creates a composite gate dielectric structure by forming a nitride layer on the dielectric layer through nitrogen treating process. This composite structure provides both the thin thickness required for miniaturization and the leakage reduction properties of thicker or modified dielectric layers, resolving the contradiction between miniaturization and leakage control
Solution Approach 2:
The patent changes the physical and chemical parameters of the gate dielectric layer by incorporating nitrogen through the nitrogen treating process and stabilizing it through rapid thermal annealing. This transforms the dielectric properties of the layer, enabling thin thickness while maintaining low leakage through enhanced dielectric quality and nitrogen stabilization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively stabilizes nitrogen in the gate dielectric layer, prevents diffusion, and enhances the reliability of semiconductor components by reducing CET and gate leakage, while maintaining high voltage resistance.
Implementation Method 1
performing a thermal treating process at 1150-1400° C. for a period of 400-800 milliseconds, to form a gate dielectric layer
Implementation Method 2
performing a nitrogen treating process to form a nitride layer on the dielectric layer
Data Source
AI summary
A method for fabricating a gate dielectric layer comprises the steps of: forming a dielectric layer on a semiconductor substrate; performing a nitrogen treating process to form a nitride layer on the dielectric layer; and performing a thermal treating process at 1150-1400° C. for a period of 400-800 milliseconds, to form a gate dielectric layer. A step of forming a gate layer on the gate dielectric layer may be performed to form a gate structure.