Semiconductor Gate Doping Layout for Higher Breakdown Voltage
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Solution Overview
Problem
Existing semi-conductor devices face challenges in achieving high breakdown voltage due to severe electric field concentration at the edges of gate and drain electrodes, leading to etching losses and reduced device reliability.
Innovation Solution
A semi-conductor structure is designed with a substrate, heterojunction, P-type ion-doped layer, and gate insulation layer, where the P-type ion-doped layer in the gate region includes activated and non-activated regions. The gate insulation layer acts as a mask to activate P-type doping ions, avoiding etching losses and enhancing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a P-type semi-conductor is disposed at a gate electrode to deplete 2DEG, then enhanced device characteristics are achieved, but etching loss occurs during the etching process outside the gate region
Solution Approach 1:
The P-type ion-doped layer is segmented into multiple non-activated regions (first, second, third non-activated regions) separated by activated regions. This segmentation allows selective activation of specific areas while maintaining isolation, thereby achieving the desired device characteristics without requiring extensive etching that would cause material loss.
Solution Approach 2:
The patent employs preliminary ion implantation to create the P-type ion-doped layer with specific spatial distribution before final activation. By pre-positioning the doping ions in non-activated regions and then selectively activating only certain areas, the method avoids the need for subsequent etching processes that would remove material.
2Reliability
If reverse bias voltage is increased to improve breakdown voltage, then power density increases, but severe electric field concentration occurs at electrode edges leading to device breakdown
Solution Approach 1:
The patent applies local quality by creating distinct activated and non-activated regions within the P-type ion-doped layer. The non-activated regions are strategically positioned to provide localized electric field modulation, reducing field concentration at critical areas such as electrode edges while maintaining high breakdown voltage characteristics in active regions.
Solution Approach 2:
The P-type ion-doped layer with its patterned activated and non-activated regions acts as an intermediary structure between the gate electrode and the channel. This intermediary configuration modifies the electric field distribution, preventing direct field concentration at electrode edges while still enabling effective 2DEG depletion for high breakdown voltage operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure increases the reverse breakdown voltage by widening the depletion region and altering the electric field distribution, thereby improving the reliability and power density of semi-conductor devices.
Implementation Method 1
a first region and a second region in the P-type ion-doped layer are activated to form first and second conductive regions
Implementation Method 2
the gate insulation layer is used as a mask layer for activating the P-type doping ions so that a region of the P-type ion-doped layer not covered by the gate insulation layer is formed into an activated region
Implementation Method 3
high-concentration two-dimensional electron gas (2DEG) existing at an AlGaN/GaN interface caused by relatively strong spontaneous polarization and piezoelectric polarization
Implementation Method 4
high-concentration two-dimensional electron gas (2DEG) existing at an AlGaN/GaN interface caused by relatively strong spontaneous polarization and piezoelectric polarization
Implementation Method 5
the gate insulation layer is used as a mask layer for activating the P-type doping ions so that a region of the P-type ion-doped layer not covered by the gate insulation layer is formed into an activated region... to increase a reverse breakdown voltage of the semi-conductor structure
Data Source
AI summary
Provided are a semi-conductor structure and a manufacturing method thereof. The semi-conductor structure includes: a substrate, a heterojunction, a P-type ion doped layer and a gate insulation layer disposed from bottom to top, wherein the heterojunction includes a source region, a drain region and a gate region; the P-type ion doped layer in the gate region includes an activated region and non-activated regions, P-type doping ions in the activated region are activated, and P-type doping ions in the non-activated regions are passivated; the non-activated regions include at least two regions which are spaced apart in a direction perpendicular to a connection line of the source region and the drain region; the gate insulation layer is located on the non-activated region to expose the activated region.