Gate Drive Control for Dynamic Avalanche Suppression

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Solution Overview

Problem

Semiconductor switching devices, such as IGBTs, experience performance degradation and reliability issues due to dynamic avalanche events caused by high current and voltage during turn-off, leading to increased switching time and potential device failure.

Innovation Solution

Implementing an advanced gate-driving technique that applies an intermediate gate voltage followed by a negative turn-off voltage, adjusted based on system parameters like junction temperature and DC-link voltage, using multiple resistive stages and variable power rails to control the switching device and suppress dynamic avalanche events.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If standard gate drive is used during turn-off, then switching speed is maintained, but dynamic avalanche events occur causing performance degradation and reliability issues

Engineering Contradiction:
Improveswitching device reliabilityVSAvoidswitching speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The gate drive signal is segmented into multiple voltage levels: an intermediate gate voltage level is applied first to reduce the risk of dynamic avalanche, followed by a negative turn-off voltage to ensure complete turn-off. This segmentation of the gate drive waveform allows the switching device to turn off safely without experiencing harmful avalanche events, thereby improving reliability while maintaining switching functionality.

Inventive Principle:
Principle #1Segmentation

2Duration of action of stationary object

If intermediate gate voltage is applied to suppress dynamic avalanche, then device lifetime is extended, but turn-off losses increase

Engineering Contradiction:
Improveswitching device lifetimeVSAvoidturn-off losses
Core Design Contradiction:
Duration of action of stationary objectVSLoss of energy

Solution Approach 1:

The gate drive system dynamically adjusts the voltage levels applied to the gate terminal based on the switching state. By applying an intermediate voltage level during the turn-off transition and then a negative voltage to ensure complete turn-off, the system optimizes the balance between suppressing dynamic avalanche (extending device lifetime) and minimizing turn-off losses, rather than using a fixed voltage level throughout the switching cycle.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentEP3654531B1Systems and methods for controlling dynamic avalanche in switching devices
Publication Date: 2022.04.13 TRANSPORTATION IP HOLDINGS LLC
  • EP3654531B1 patent drawingFigure 1
  • EP3654531B1 patent drawingFigure 2
  • EP3654531B1 patent drawingFigure 3

AI summary

Systems and methods for mitigating occurrences of dynamic avalanche events are presented. An electrical system (10) may include a gate-drive unit (14) electrically coupled to a semiconductor switching device (24) and used to drive the switching device (24) by applying a voltage (42) to a gate terminal (22) of the switching device (24). The electrical system (10) may also include a controller (18) that indicates the switching device (24) to turn off and determines system parameters in response to the switching device (24) turning-off. The controller (18) may determine an intermediate gate voltage based at least in part on the system parameters and may modify the gate-drive unit (14) configuration to apply the appropriate intermediate gate voltage to the gate terminal (22). The controller (18) may additionally modify the gate-drive unit (14) configuration to apply a turn-off voltage at the gate terminal (22) subsequent to the application of the intermediate gate voltage.