Power Semiconductor Gate Drive with Level Shifting and Isolation

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Solution Overview

Problem

Existing power semiconductor drive devices struggle to appropriately drive multiple power semiconductor elements with different reference potentials, leading to increased device size and cost, and complex signal processing.

Innovation Solution

A power semiconductor drive device incorporating a conversion circuit to convert a serial signal into parallel signals, level shift circuits to adjust for different reference potentials, and voltage holding structures to electrically separate drive circuits, allowing for efficient driving of multiple power semiconductor elements with distinct reference potentials on a single semiconductor substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple power semiconductor elements with different reference potentials are driven using existing parallel signal conversion techniques, then the drive capability is improved, but the device complexity and configuration complexity increase significantly

Engineering Contradiction:

Improvedrive capability for multiple power semiconductor elementsVSAvoidconfiguration complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The drive device is segmented into multiple independent drive circuits, each dedicated to driving a specific power semiconductor element. Each drive circuit includes its own level shift circuit and voltage holding structure, allowing independent operation and simplifying the overall configuration. This segmentation enables the device to handle multiple power semiconductor elements with different reference potentials without requiring complex inter-circuit coordination.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Level shift circuits are introduced as intermediary components between the signal source and each power semiconductor element. These level shift circuits convert the input signal to the appropriate voltage level for each specific power semiconductor element, eliminating the need for complex signal conditioning circuits and simplifying the overall drive configuration.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Adaptability or versatility

If existing drive configurations are used for power semiconductor elements with different reference potentials, then the basic drive function is maintained, but the device size increases

Engineering Contradiction:

Improvecompatibility with different reference potentialsVSAvoiddevice size

Core Design Contradiction:

Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

By segmenting the drive device into modular drive circuits, each handling a specific power semiconductor element, the overall device size is optimized. Each module can be independently sized according to its specific requirements, avoiding the need for oversized common components that would be required in a non-segmented configuration.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Each drive circuit is customized with local quality adjustments through its dedicated level shift circuit and voltage holding structure, which are sized and configured specifically for the requirements of that particular power semiconductor element. This local optimization prevents the need for oversized universal components throughout the entire device.

Inventive Principle:

Principle #3Local quality

3Adaptability or versatility

If existing drive configurations are used for power semiconductor elements with different reference potentials, then the basic drive function is maintained, but the manufacturing cost increases

Engineering Contradiction:

Improvecompatibility with different reference potentialsVSAvoidmanufacturing cost

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The segmented architecture allows for standardized modular components to be manufactured and assembled. Each drive circuit module can be produced using the same manufacturing processes and then assembled in different configurations to match specific application requirements, reducing tooling costs and improving manufacturing efficiency.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The drive circuits are designed with universal interfaces and standardized components that can be used across different power semiconductor element types. The level shift circuits and voltage holding structures can be configured for different voltage requirements using the same basic circuit topology, reducing the need for application-specific custom designs and lowering manufacturing costs.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS20260066772A1Power semiconductor drive device

Publication Date: 2026.03.05 MITSUBISHI ELECTRIC CORP

AI summary

An object is to provide a technique capable of appropriately driving a plurality of power semiconductor elements each having reference potential different from each other. A power semiconductor drive device includes: a conversion circuit converting a serial signal from an outer part into a plurality of parallel signals; a plurality of drive circuits driving a plurality of power semiconductor elements each having reference potential different from each other, respectively; a plurality of level shift circuits connected between the conversion circuit and the plurality of drive circuits and level-shifting the plurality of parallel signals in accordance with the reference potential of the plurality of power semiconductor elements, respectively; and a voltage holding structure electrically separating each of the plurality of drive circuits.