Gate Drive Circuit Layout for Stable LTPO Stage Transfer
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Solution Overview
Problem
The integration of low temperature polycrystalline silicon and metal oxide technologies in display panels results in reduced stability of circuit stage transfer and increased risk of GOA circuit failure, leading to split screen phenomena due to prolonged holding times of nodes in the driving circuit during low-frequency operation.
Innovation Solution
Incorporation of a gate electrode driving circuit with cascading thin film transistors, including polycrystalline silicon and metal oxide semiconductor layers, to reduce off-state current and leakage current, thereby enhancing stability and preventing GOA circuit failure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If low temperature polycrystalline silicon and metal oxide technologies are integrated into LTPO technology, then power consumption is optimized, but stability of circuit stage transfer is reduced and GOA circuit is prone to failure
Solution Approach 1:
The patent applies local quality by using different semiconductor materials (polycrystalline silicon vs. metal oxide) in different regions of the display panel. Specifically, metal oxide thin film transistors are used in the gate driving region where low leakage current is critical, while polycrystalline silicon is used in other regions. This localized material selection optimizes both power consumption and circuit stability in the critical GOA circuit area.
Solution Approach 2:
The patent employs composite materials by integrating both polycrystalline silicon and metal oxide semiconductor layers in the same display panel structure. This hybrid approach allows the system to benefit from the low off-state current of metal oxide materials in critical circuits while maintaining the high performance of polycrystalline silicon materials elsewhere, thus resolving the contradiction between power optimization and circuit stability.
2Use of energy by moving object
If holding times of nodes in driving circuit are prolonged for low frequency operation, then power consumption is reduced, but stability of circuit stage transfer is reduced and split screen phenomenon occurs
Solution Approach 1:
The patent applies parameter changes by modifying the electrical characteristics of the thin film transistors through material selection. By using metal oxide semiconductor materials with specifically controlled electrical parameters (low off-state current), the circuit can maintain stable signal transfer during prolonged holding times at low frequencies without causing split screen phenomena, thus enabling low power consumption operation.
Data Source
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AI summary
A display panel, a gate electrode driving circuit, and an electronic device are provided. The display panel includes a first metal layer including a first gate electrode; a second metal layer including a first source electrode, a first drain electrode, and a second gate electrode; two ends of a polycrystalline silicon semiconductor layer electrically connected to the first source electrode and the first drain electrode respectively; a third metal layer including a second source electrode and a second drain electrode; and two ends of a metal oxide semiconductor layer electrically connected to the second source electrode and the second drain electrode respectively.