Power Transistor Gate Drive Short-Circuit Detection Beyond Miller Period
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Solution Overview
Problem
Existing short circuit detection methods for power semiconductor elements, such as IGBTs and MOSFETs, are prone to malfunctions due to noise interference and require additional components like sense cells or high-voltage diodes, leading to increased size and complexity, and are not applicable to all types of semiconductor elements.
Innovation Solution
A drive circuit with a short circuit determination unit that uses gate voltage and current to detect short circuits, combined with a filter that delays the determination signal beyond the Miller period to suppress false positives, and does not require a sense cell or resistor, allowing for wide applicability and high-speed protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If noise filtering measures are taken using filters to achieve high-speed protection from short circuit, then responsiveness is improved, but false detection occurs due to noise interference
Solution Approach 1:
The patent applies dynamic timing window adjustment based on the Miller period. The detection circuit dynamically opens the detection window only during the Miller period when dVce/dt is minimal, and closes it during other periods when noise is more prevalent. This dynamic adaptation allows high-speed detection during the critical Miller period while filtering out noise during other periods, resolving the contradiction between speed and reliability.
Solution Approach 2:
The patent performs preliminary identification of the Miller period timing before conducting short-circuit detection. By pre-synchronizing the detection window with the expected Miller period timing, the system ensures that detection occurs at the optimal moment when noise is minimized, thereby achieving both high-speed protection and accurate detection without false positives.
2Reliability
If additional components like sense cells or high-voltage diodes are added to detect short circuits, then detection capability is improved, but device size and complexity increase
Solution Approach 1:
The patent makes the existing gate drive circuit perform multiple functions: it simultaneously drives the power semiconductor device and detects short circuits by monitoring gate voltage during the Miller period. The gate drive circuit's existing components (gate resistor, gate capacitor) are utilized for both driving and detection purposes, eliminating the need for separate sense cells or high-voltage diodes, thus maintaining reliability while reducing complexity.
Solution Approach 2:
The patent enables the power semiconductor device's own gate drive circuit to perform self-diagnosis for short-circuit detection. By monitoring the gate voltage waveform characteristics (specifically the Miller period) that naturally occur during normal operation, the system uses the device's own operational characteristics for detection without requiring external diagnostic components, thereby achieving reliable detection with minimal added complexity.
3Device complexity
If detection is based on gate voltage reaching reference voltage, then simple detection is achieved, but false detection occurs when gate voltage temporarily exceeds reference due to noise
Solution Approach 1:
The patent implements a dynamic detection window that is actively opened only during the Miller period and closed during other periods. This dynamic control prevents false detection by ensuring that the reference voltage comparison is performed exclusively when dVce/dt is minimal (during Miller period), rather than continuously. The simple threshold comparison is thus made reliable through dynamic temporal gating.
Solution Approach 2:
The patent maintains continuous monitoring of the gate voltage but applies the reference comparison only during the useful action window (Miller period). By continuously tracking the gate voltage waveform and selectively evaluating it only during the Miller period when detection is meaningful, the system achieves both simplicity and reliability - the simple threshold check is continuously available but only activates when conditions are right.
Data Source
AI summary
A drive circuit drives a power semiconductor element including a gate electrode, a first main electrode and a second main electrode. The drive circuit includes: a controller to control an opened/closed state of the power semiconductor element based on an externally received command; a short circuit determination circuitry to determine whether the power semiconductor element is in a short-circuited state in a turn-on operation of the power semiconductor element, and output a determination signal indicating a determination result; and a filter to receive the determination signal from the short circuit determination circuitry, generate a delay signal of the determination signal, and output the delay signal to the controller. A delay time of the filter is set to be longer than a length of a Miller period in the turn-on operation of the power semiconductor element.


