Gate Drive Circuit Layout With Parallel Capacitor for Smaller LCD Panels
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Solution Overview
Problem
The existing gate drive circuits for large-sized LCD panels face challenges in reducing the size of the gate drive circuit while maintaining reliability, as the integration of amorphous silicon gate technology increases the size of the gate drive circuit on the glass substrate, leading to increased manufacturing costs and reduced productivity.
Innovation Solution
A gate drive circuit design featuring multiple stages with a capacitor part formed in a parallel structure, where the capacitor includes two capacitors connected in parallel to reduce the overall size and eliminate coupling capacitance, enhancing reliability by electrically connecting the gate and source electrodes through specific insulation layers and bridge electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If amorphous silicon gate technology is utilized with large-sized LCD panels, then manufacturing costs decrease and productivity enhances, but the size of the gate drive circuit on the glass substrate increases
Solution Approach 1:
The gate drive circuit is moved from the glass substrate to the TFT substrate, utilizing a different dimensional plane for circuit integration. This separation allows the glass substrate to maintain its original size while the gate drive circuit is formed on the TFT substrate in the peripheral area, effectively resolving the area conflict.
Solution Approach 2:
The display device is divided into separate functional substrates: the glass substrate for display functions and the TFT substrate for driving circuit functions. This segmentation allows each substrate to be optimized independently, with the gate drive circuit occupying peripheral areas of the TFT substrate without affecting the glass substrate size.
2Device complexity
If the size of the gate drive circuit is increased, then the gate drive circuit can accommodate more components, but the size of the glass substrate must increase leading to increased manufacturing costs
Solution Approach 1:
The gate drive circuit is relocated to the TFT substrate, utilizing the peripheral area of the TFT substrate rather than expanding the glass substrate. This dimensional reassignment allows complex gate drive circuits to be implemented without increasing glass substrate size or manufacturing costs.
Solution Approach 2:
The TFT substrate serves multiple functions: as the active display substrate and as the carrier for the gate drive circuit. This multi-functionality allows the gate drive circuit to be integrated without requiring additional substrate area, as the TFT substrate already exists and its peripheral areas are utilized.
3Device complexity
If the width of the gate drive circuit is increased on a fixed glass substrate, then the gate drive circuit can accommodate more components, but the number of manufacturable LCD panels decreases
Solution Approach 1:
The gate drive circuit is moved to the TFT substrate's peripheral area, utilizing space that would otherwise be unused. This allows the glass substrate to maintain its full width and accommodate the same number of LCD panels, while the gate drive circuit complexity is increased on the TFT substrate without affecting manufacturing quantity.
Solution Approach 2:
The display device is segmented into glass substrate for display and TFT substrate for driving functions. This segmentation allows independent optimization: the glass substrate maintains its original dimensions for high manufacturing yield, while the TFT substrate accommodates complex gate drive circuits in its peripheral areas.
4Reliability
If a capacitor is formed between input terminal and output terminal of output transistor, then the gate drive circuit functions properly, but the capacitor occupies large area requiring size reduction
Solution Approach 1:
The capacitor is formed in the peripheral area of the TFT substrate rather than on the glass substrate. This dimensional separation allows the capacitor to be positioned in unused peripheral spaces, reducing its impact on the overall device area while maintaining its essential function for gate drive circuit reliability.
Data Source
AI summary
A gate drive circuit includes plural stages connected together one after each other. Each of the plural stages includes a circuit transistor, a capacitor part, a first connection part and a second connection part. The circuit transistor outputs the gate signal through a source electrode in response to a control signal applied through a gate electrode. The capacitor part includes a first electrode, a second electrode formed on the first electrode, and a third electrode formed on the second electrode. The first connection part electrically connects the gate electrode of the circuit transistor and the second electrode of the capacitor part. The second connection part electrically connects the source electrode of the circuit transistor and the first electrode of the capacitor part. Thus, an integrated size of a gate drive circuit may be decreased, and a reliability of a gate drive circuit may be enhanced.