Gate Drive Voltage Monitoring for High-Side Short-Circuit Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in managing short circuits in external switch elements, particularly when used on the high side, as they can lead to increased current flow, which may cause damage or inefficiencies.
Innovation Solution
The semiconductor device incorporates a boost circuit and voltage monitor circuit configuration that interrupts the transfer of voltage to the gate of the external switch element when a short circuit is detected, using a signal-based control system to manage the voltage and prevent excessive current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage is continuously supplied to the gate of the external switch element, then the switch element can be driven effectively, but current increases excessively when a short circuit occurs
Solution Approach 1:
The voltage monitor circuit continuously monitors the voltage at the gate of the external switch element and provides feedback to the drive circuit. When a short circuit is detected (voltage drops below threshold), the feedback signal triggers the drive circuit to interrupt voltage supply, thereby suppressing excessive current while maintaining normal operation during non-fault conditions.
Solution Approach 2:
The voltage monitor circuit acts as an intermediary between the drive circuit and the external switch element. It detects voltage conditions and translates them into control signals that regulate the drive circuit's output, enabling intelligent current management without directly controlling the power flow itself.
2Reliability
If a voltage monitor circuit is added to detect short circuits, then short circuit damage is prevented, but device complexity increases
Solution Approach 1:
The voltage monitor circuit and drive circuit are merged into a single integrated unit within the semiconductor device. The monitor circuit shares the same physical package and control signals with the drive circuit, eliminating the need for separate external monitoring components and reducing overall system complexity despite adding internal functionality.
Solution Approach 2:
The drive circuit is designed with multi-functionality, serving both to drive the external switch element normally and to respond to fault conditions detected by the integrated voltage monitor. This universal design eliminates the need for completely separate protection circuitry, maintaining compactness while providing comprehensive protection.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first circuit configured to generate a first voltage, a second circuit configured to transfer the generated first voltage to a first terminal, and a third circuit configured to generate a first signal that demonstrates a first level when a voltage at the first terminal is higher than or equal to a threshold voltage, and a second level when the voltage of the first terminal is lower than the threshold voltage, wherein the second circuit is configured to interrupt transfer of the first voltage, based on the first signal at the second level.